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  1. No Access

    Article

    Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots

    Electronic and optical properties of ensembles of quantum dots with various energies of activation from the ground-state level to the continuous-spectrum region were studied theoretically and experimentally wi...

    D. S. Sizov, E. E. Zavarin, N. N. Ledentsov, V. V. Lundin… in Semiconductors (2007)

  2. No Access

    Article

    The study of lateral carrier transport in structures with InGaN quantum dots in the active region

    GaN-based structures with InGaN quantum dots in the active region, which emit in the blue and green spectral ranges, are studied. The structures grown by both the conventional method and with the use of specia...

    V. S. Sizov, D. S. Sizov, G. A. Mikhailovskiĭ, E. E. Zavarin… in Semiconductors (2006)

  3. No Access

    Article

    Near-field photoluminescence spectroscopy of InGaN quantum dots.

    We used temperature dependent near-field magneto-photoluminescence spectroscopy to study the emission properties of blue-green InGaN quantum wells (QWs) with spatial resolution of ~100 nm. Spectral features re...

    A. M. Mintairov, J. L. Merz, D. S. Sizov, V. S. Sizov… in MRS Online Proceedings Library (2005)

  4. No Access

    Article

    Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy

    Structures with InGaN/GaN quantum dots have been studied using photocurrent spectroscopy. The dynamic range of measurements is found to amount to four orders of magnitude under preservation of the signal-to-no...

    D. S. Sizov, V. S. Sizov, V. V. Lundin, A. F. Tsatsul’nikov… in Semiconductors (2005)

  5. No Access

    Article

    Influence of the carrier gas composition on metalorganic vapor phase epitaxy of gallium nitride

    The influence of hydrogen and nitrogen as carrier gases on the rates of gallium nitride (GaN) growth and etching in the process of metalorganic vapor phase epitaxy (MOVPE) have been studied. Based on these dat...

    W. V. Lundin, E. E. Zavarin, D. S. Sizov in Technical Physics Letters (2005)

  6. No Access

    Article

    A study of carrier statistics in InGaN/Gan LED structures

    The carrier statistics in LED structures with ultrathin multilayer InGaN insertions in a GaN matrix was studied. The optical data obtained indicate that an array of quantum dots (QDs) is formed in these struct...

    D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin… in Semiconductors (2005)

  7. No Access

    Article

    Kinetics and inhomogeneous carrier injection in InGaN nanolayers

    The electrical and optical properties of light-emitting devices with an active region containing several layers of InGaN/GaN quantum dots (QDs) separated by GaN spacers are studied. It is shown that the overgr...

    D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin… in Semiconductors (2005)

  8. No Access

    Article

    Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures

    The influence of dislocations on photoluminescence (PL) intensity in structures with InAs-GaAs quantum dots (QD) has been studied. The structural characteristics of samples were studied by transmission electro...

    M. V. Maksimov, D. S. Sizov, A. G. Makarov, I. N. Kayander, L. V. Asryan… in Semiconductors (2004)

  9. No Access

    Article

    Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition

    Special features of metal-organic chemical vapor deposition of AlGaN epitaxial layers and AlGaN/GaN superlattices either in an Epiquip VP-50 RP research and development reactor (for a single wafer 2 in. in dia...

    W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin… in Semiconductors (2004)

  10. No Access

    Chapter and Conference Paper

    MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range

    Peculiarities of AlGaN epilayer and AlGaN/GaN superlattice (SL) growth were investigated using R&D-scale (Epiquip VP-50 RP, 1 × 2 inch) and production-scale (AIX2000HT, 6 × 2 inch) MOCVD reactors. Structures w...

    W. V. Lundin, A. V. Sakharov… in UV Solid-State Light Emitters and Detectors (2004)

  11. No Access

    Article

    Structural and optical properties of InAs quantum dots in AlGaAs matrix

    Structural and optical properties of InAs quantum dots (QDs) grown in a wide-bandgap Al0.3Ga0.7As matrix is studied. It is shown that a high temperature stability of optical properties can be achieved owing to de...

    D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov… in Semiconductors (2003)

  12. No Access

    Article

    High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

    Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied. The lasing wavelength lies in the range λ=1.25–1.29 μm, depending on the number of QD layers and optica...

    S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil’ev… in Semiconductors (2002)

  13. No Access

    Article

    Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures

    The optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy with different nitrogen content in the layers have been studied. The optical properties of GaAsN layers in the growth condi...

    B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh… in Semiconductors (2002)

  14. No Access

    Article

    The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

    Structures with In(Ga)As quantum dots in the GaAs matrix obtained using molecular-beam epitaxy are investigated using photoluminescence (PL) measurements and transmission electron microscopy. The structures we...

    D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. A. Cherkashin… in Semiconductors (2002)

  15. No Access

    Article

    Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells

    It is demonstrated that longwave room-temperature photoluminescence (up to 1.65 μm) can be obtained using InGaAs/GaAs heterostructures of two types grown by low-temperature molecular beam epitaxy: (i) with InA...

    A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, G. E. Cirlin… in Technical Physics Letters (2002)

  16. No Access

    Article

    InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

    A new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga)As is suggested. At the first stage, an InGaAs layer with a thickness above the critical value for dislocation formation is deposi...

    I. L. Krestnikov, N. A. Cherkashin, D. S. Sizov, D. A. Bedarev… in Technical Physics Letters (2001)

  17. No Access

    Article

    The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm

    Optical properties of structures with vertically coupled quantum dots grown by the combined submonolayer molecular-beam epitaxy were investigated. It is shown that the formation of the laterally coupled conglo...

    B. V. Volovik, D. S. Sizov, A. F. Tsatsul’nikov, Yu. G. Musikhin… in Semiconductors (2000)

  18. No Access

    Article

    Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm

    The optical properties of multilayer structures with quantum dots in the heteroepitaxial InAs/GaAs system have been studied. The structures were obtained by the method of submonolayer migration-stimulated epit...

    G. É. Tsyrlin, N. K. Polyakov, V. A. Egorov, V. N. Petrov… in Technical Physics Letters (2000)