Abstract
Tunnel-coupled pairs of InAs quantum dots (quantum molecules) were formed by molecular beam epitaxy in a GaAs matrix. Optical and structural properties of the obtained quantum molecules were studied. Four molecular exciton states forming a photoluminescence spectrum were revealed. The photoluminescence decay times indicate the possibility of interlevel radiative recombination from the second excited state, which is of particular importance for designing mid-infrared devices.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 6, 2004, pp. 723–728.
Original Russian Text Copyright © 2004 by Talalaev, Tomm, Zakharov, Werner, Novikov, Cirlin, Samsonenko, Tonkikh, Egorov, Polyakov, Ustinov.
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Talalaev, V.G., Tomm, J.W., Zakharov, N.D. et al. Spectroscopy of exciton states of InAs quantum molecules. Semiconductors 38, 696–701 (2004). https://doi.org/10.1134/1.1766375
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DOI: https://doi.org/10.1134/1.1766375