42 Result(s)
within
A.A. Tonkikh
Physics
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Article
Activated Hop** Transport in Nematic Conducting Aerogels
The transport properties of nematic aerogels, which consist of highly oriented Al2O3⋅SiO2 nanofibers coated with a graphene shell with a large number of defects, are studied. The temperature dependences of the el...
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Article
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground ...
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Article
Specific features of tangential modes in Raman scattering spectra of semiconducting single-walled carbon nanotubes with a large diameter
The lattice dynamics and optical properties of individual semiconducting single-walled carbon nanotubes with diameters of greater than 2.0 nm have been investigated using resonant Raman spectroscopy over a wid...
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Article
Lateral photoconductivity in structures with Ge/Si quantum dots
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent ...
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Article
Pseudomorphic GeSn/Ge (001) heterostructures
The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free...
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Article
Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is...
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Article
Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot f...
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Article
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
InGaAs/GaAs and Ge/Si light-emitting heterostructures with active regions consisting of a system of different-size nanoobjects, i.e., quantum dot layers, quantum wells, and a tunneling barrier are studied. The...
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Article
Wannier-stark effect in Ge/Si quantum dot superlattices
Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was establis...
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Article
Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy
The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in b...
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Article
Resonances related to an array of InAs quantum dots and controlled by an external electric field
Photoluminescence of multilayer structures with InAs quantum dots grown in the p-n junction in GaAs by molecular-beam epitaxy is studied. Formation of vertical columns of quantum dots is verified by the data of t...
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Article
Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells
Magnetic-field-induced circular polarization of the photoluminescence peak related to A(+) centers in quantum wells is measured for the first time. It is shown that, in a magnetic field of 4 T, the polarization d...
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Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...
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Article
The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy
The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studie...
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Article
Erratum: “Atomic structure of MBE-grown GaAs nanowhiskers” [Phys. Solid State 47, 2213 (2005)]
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Article
The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots
The energy band diagram of the multilayered Ge0.8Si0.2/Ge0.1Si0.9 heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the colu...
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Article
A3B5 nanowhiskers: MBE growth and properties
The structural properties of GaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maxi...
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Article
Atomic structure of MBE-grown GaAs nanowhiskers
The structural properties of MBE-grown GaAs and Al0.3Ga0.7 As nanowhiskers were studied. The formation of wurtzite and 4H-polytype hexagonal structures with characteristic sizes of 100 nm or larger in these mater...
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Article
The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates
Deep-level transient spectroscopy is used to study charge-carrier emission from the states of separate quantum dots in InAs/GaAs p-n heterostructures grown on (100)-and (311)A-oriented GaAs substrates in relation...
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Article
The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system
The results of experimental and theoretical studies of quantum dot formation in an InAs/GaAs(100) system in the case of a subcritical width of the deposited InAs layer (1.5–1.6 monolayers) are presented. It is...
