Abstract
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trap** of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
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Original Russian Text © V.Yu. Panevin, A.N. Sofronov, L.E. Vorobjev, D.A. Firsov, V.A. Shalygin, M.Ya. Vinnichenko, R.M. Balagula, A.A. Tonkikh, P. Werner, B. Fuhrman, G. Schmidt, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 12, pp. 1599–1603.
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Panevin, V.Y., Sofronov, A.N., Vorobjev, L.E. et al. Lateral photoconductivity in structures with Ge/Si quantum dots. Semiconductors 47, 1574–1577 (2013). https://doi.org/10.1134/S1063782613120154
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DOI: https://doi.org/10.1134/S1063782613120154