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  1. No Access

    Article

    Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser

    The results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In0.53Ga0.47As...

    A. V. Babichev, A. G. Gladyshev, A. S. Kurochkin, E. S. Kolodeznyi… in Semiconductors (2019)

  2. No Access

    Article

    Lasing in 9.6-μm Quantum Cascade Lasers

    Lasing in MBE-grown impulsively pumped quantum cascade lasers of 9.6 μm at 140 K has been demonstrated. The active area is based on three-phonon resonance scattering of electrons. An In0.53Ga0.47As/Al0.48In0.52As...

    A. V. Babichev, G. A. Gusev, A. N. Sofronov, D. A. Firsov… in Technical Physics (2018)

  3. No Access

    Article

    Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature

    We report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by mole...

    V. V. Mamutin, A. P. Vasil’ev, A. V. Lyutetskii… in Technical Physics Letters (2018)

  4. No Access

    Article

    On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers

    The fabrication and study of the characteristics of a lattice-matched quantum cascade laser structure on an indium-phosphide substrate, designed for a wavelength of ~4.8 μm corresponding to one of the atmosphe...

    V. V. Mamutin, A. P. Vasilyev, A. V. Lyutetskiy, N. D. Ilyinskaya… in Semiconductors (2018)

  5. No Access

    Article

    Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots

    The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground ...

    A. N. Sofronov, R. M. Balagula, D. A. Firsov, L. E. Vorobjev… in Semiconductors (2018)

  6. No Access

    Article

    Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field

    The modulation of polarized radiation by GaAs/AlGaAs structures with tunnel-coupled double quantum wells in a strong lateral electric field is studied. The spectra of the variation in the refractive index unde...

    R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, A. N. Sofronov… in Semiconductors (2017)

  7. No Access

    Article

    Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm

    The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunctio...

    A. V. Babichev, A. Bousseksou, N. A. Pikhtin, I. S. Tarasov… in Semiconductors (2016)

  8. No Access

    Article

    Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pum**

    The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pum** are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy techn...

    A. Yu. Egorov, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov… in Semiconductors (2015)

  9. No Access

    Article

    Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pum**

    Radiation in the terahertz (THz) spectral range from structures with GaAs/AlGaAs doped quantum wells is investigated under conditions of the interband optical excitation of electron-hole pairs in n-type structure...

    D. A. Firsov, L. E. Vorobjev, V. Yu. Panevin, A. N. Sofronov… in Semiconductors (2015)

  10. No Access

    Article

    Lateral photoconductivity in structures with Ge/Si quantum dots

    The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent ...

    V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov… in Semiconductors (2013)

  11. No Access

    Article

    Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

    The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot f...

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, V. Yu. Panevin… in Semiconductors (2012)

  12. No Access

    Article

    Current-induced spin polarization of holes in tellurium

    The current-induced optical activity in a tellurium single crystal has been experimentally investigated in the mid-infrared spectral region. The phenomenological theory of the current-induced optical activity ...

    V. A. Shalygin, A. N. Sofronov, L. E. Vorob’ev… in Physics of the Solid State (2012)

  13. No Access

    Article

    Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field

    The emission of terahertz radiation from a AlGaN/GaN heterostructure under the heating of two-dimensional electrons in a lateral electric field is studied. The field dependence of the temperature of hot electr...

    V. A. Shalygin, L. E. Vorobjev, D. A. Firsov… in Bulletin of the Russian Academy of Science… (2012)

  14. No Access

    Article

    Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

    Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown ...

    D. A. Firsov, V. A. Shalygin, V. Yu. Panevin, G. A. Melentyev… in Semiconductors (2010)

  15. No Access

    Article

    Carrier heating in quantum wells under optical and current injection of electron-hole pairs

    Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pum** in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pum** intens...

    L. E. Vorobjev, M. Ya. Vinnichenko, D. A. Firsov, V. L. Zerova… in Semiconductors (2010)

  16. No Access

    Article

    Absorption and modulation of absorption in p-GaAs/AlGaAs quantum well nanostructures

    Optical phenomena in GaAs/AlGaAs quantum well nanostructures doped with acceptors were studied in the mid-IR spectral range. Equilibrium abso rption spectra were measured in a wide temperature range. Modulatio...

    D. A. Firsov, L. E. Vorob’ev, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2010)

  17. No Access

    Article

    Emission of terahertz radiation from GaN under impact ionization of donors in an electric field

    The emission of terahertz radiation from epitaxial n-GaN layers in lateral electric field was found and studied for the first time. Radiation emission was observed in fields exceeding the impurity breakdown thres...

    V. A. Shalygin, L. E. Vorob’ev, D. A. Firsov… in Bulletin of the Russian Academy of Science… (2010)

  18. No Access

    Article

    Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field

    Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with loca...

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2008)

  19. No Access

    Article

    Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

    Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related...

    D. A. Firsov, L. E. Vorobjev, V. A. Shalygin… in Bulletin of the Russian Academy of Science… (2008)

  20. No Access

    Article

    Impurity breakdown and electroluminescence in the terahertz range in p-GaAs and p-GaAsN microstructures

    The current-voltage characteristics of strained GaAsN:Be layers have been studied under the conditions of hop** conductivity and impurity breakdown, and the electroluminescence of these layers has been measu...

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin, V. Yu. Panevin… in Technical Physics Letters (2006)