6 Result(s)

Article

Interdisk spacing effect on resonant properties of Ge disk lattices on Si substrates

The light reflection properties of Ge disk lattices on Si substrates are studied as a function of the disk height and the gap width between disks. The interdisk spacing effect is observed even at such large ga...

A. A. Shklyaev, D. E. Utkin, A. V. Tsarev, S. A. Kuznetsov… in Scientific Reports (2022)

Article

Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology

This article contains the results of research on the topical problem of highly sensitive express registration of biological objects using field-effect transistors with the surface open for analyte access, whic...

O. V. Naumova, V. M. Generalov, E. G. Zaitseva, A. V. Latyshev… in Russian Microelectronics (2021)

Article

Dewetting behavior of Ge layers on SiO₂ under annealing

The solid-state dewetting phenomenon in Ge layers on SiO₂ is investigated as a function of layer thickness d_Ge (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580–700 °C, dependi...

A. A. Shklyaev, A. V. Latyshev in Scientific Reports (2020)

Article

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800–1100 °C of 30–150 nm Ge layers deposited on Si(100) at 400–500 °C. It is fo...

A. A. Shklyaev, A. V. Latyshev in Nanoscale Research Letters (2016)

Article

Erratum to: “Surface enhanced Raman scattering of light by ZnO nanostructures”

A. G. Milekhin, N. A. Yeryukov… in Journal of Experimental and Theoretical Ph… (2012)

Article

New resonant backscattering mode in a small-size quantum interferometer

Z. D. Kvon, E. A. Galaktionov, V. A. Sablikov, A. K. Savchenko… in JETP Letters (2006)