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Article
Open AccessGrowth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation
For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hex...
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Article
Open AccessManifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal
The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interactio...
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Article
Open AccessSynthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix
The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are fo...
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Article
Open AccessPhotoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge
The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm)...
