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  1. No Access

    Article

    Equilibrium Concentration of Kinks on the SB Steps of the Si(100) Surface

    The temperature and time dependences of the concentration of kinks on the SA and SB steps perpendicular to the upper-terrace dimer rows on the Si(100) surface with an inclination of 0.5° are established. The numb...

    M. Yu. Yesin, S. A. Teys, A. I. Nikiforov in Journal of Surface Investigation: X-ray, S… (2022)

  2. No Access

    Article

    Misfit Stresses in Epitaxial Germanium Nanofilms on Substrates of Si(111) with Low-Density Surface Phases

    It is established for the first time in the physics of condensed matter that the transitions of superstructural phases on the surface of an epitaxial nanofilm can be accompanied by relaxation of misfit stresses σ

    S. A. Teys, E. M. Trukhanov… in Bulletin of the Russian Academy of Science… (2020)

  3. Article

    Open Access

    Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge

    The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200–250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm)...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, S. A. Teys… in Scientific Reports (2020)

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  4. No Access

    Article

    An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms

    A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained atomic layer. The...

    E. M. Trukhanov, S. A. Teys in Technical Physics Letters (2019)

  5. No Access

    Article

    Formation of a Graphene-Like SiN Layer on the Surface Si(111)

    00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed du...

    V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko… in Semiconductors (2018)

  6. No Access

    Article

    Different STM images of the superstructure on a clean Si(133)-6 × 2 surface

    New detailed scanning tunneling microscopy images of the superstructure on an atomically clean Si(133)-6 × 2 surface are obtained. Similarities and differences with previously reported images are discussed. On...

    S. A. Teys in JETP Letters (2017)

  7. No Access

    Article

    Types of surface modulation in a Ge–Si(111) heterosystem

    Three types of elastic modulation in atomic layers of epitaxial Ge films on the surface of Si(111) observed in scanning tunnel microscopy are discussed. Two types of modulation are associated with misfit dislo...

    E. M. Trukhanov, S. A. Teys in Bulletin of the Russian Academy of Sciences: Physics (2016)

  8. No Access

    Article

    Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy

    Temperature dependence of the critical thickness of the transition from two-dimensional to threedimensional growth of the Ge1–5x Si4x Sn ...

    A. R. Tuktamyshev, V. I. Mashanov, V. A. Timofeev, A. I. Nikiforov… in Semiconductors (2015)

  9. No Access

    Article

    Nucleation and growth of ordered groups of SiGe quantum dots

    An approach for the formation of ordered groups of Ge nanoislands (quantum dots, QDs) upon epitaxial growth on the surface of a heterostructure constituted by a Si (100) substrate having preliminarily formed s...

    V. A. Zinovyev, A. V. Dvurechenskii, P. A. Kuchinskaya, V. A. Armbrister… in Semiconductors (2015)

  10. No Access

    Article

    Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method

    Tunneling electron transport through CdS nanocrystal arrays fabricated by the Langmuir-Blodgett method are studied by scanning electron spectroscopy. The effect of the matrix-annealing atmosphere on tunneling ...

    K. A. Svit, D. Yu. Protasov, L. L. Sveshnikova, A. K. Shestakov… in Semiconductors (2014)

  11. No Access

    Article

    Analysis of the dislocation structure at the Ge/Si(111) heterointerface

    We demonstrate the formation of a modified triangular network of Shockley edge partial misfit dislocations at a plastic-relaxation level of ρ = 0.72 of 3D Ge(111) islands grown on a wetting layer. The network ...

    A. S. Ilin, E. M. Trukhanov, S. A. Teys… in Journal of Surface Investigation. X-ray, S… (2014)

  12. No Access

    Article

    Formation of Ge/Si and Ge/Ge x Si1−x /Si nanoheterostructures by molecular beam epitaxy

    A kinetic diagram of Ge growth on Si is constructed by methods of fast electron diffraction and scanning electron microscopy. Activation energies of morphological transitions from two-dimensional to three-dime...

    A. I. Nikiforov, V. A. Timofeev, S. A. Teys… in Optoelectronics, Instrumentation and Data … (2014)

  13. No Access

    Article

    Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces

    The intermediate stages of the formation of a Ge wetting layer on Si(111) and Si(100) surfaces under quasiequilibrium grow conditions have been studied by means of scanning tunneling microscopy. The redistribu...

    S. A. Teys in JETP Letters (2013)

  14. No Access

    Article

    Influence of the Si(111)-7×7 surface reconstruction on the diffusion of strontium atoms

    The diffusion of strontium atoms on the Si(111) surface at room temperature has been investigated using scanning tunnel microscopy and simulation carried out in terms of the density functional theory and the M...

    R. A. Zhachuk, S. A. Teys, B. Z. Olshanetsky in Journal of Experimental and Theoretical Ph… (2011)

  15. No Access

    Article

    Superstructure phase transitions in Ge on Si (111) at the initial stage of epitaxial growth

    The surface phase transitions 7 × 7 → 5 × 5 for two-dimensional and c2 × 8 →7 × 7 and 7 × 7 → c2 × 8 for three-dimensional Ge islands epitaxially grown on Si(111) were found experimentally using scan- ning tunnel...

    S. A. Teys, E. M. Trukhanov, A. S. Ilin… in Bulletin of the Russian Academy of Science… (2011)

  16. No Access

    Article

    Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

    The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data o...

    R. A. Zhachuk, S. A. Teys, B. Z. Olshanetsky in Physics of the Solid State (2010)

  17. No Access

    Article

    Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

    The results of the structural and morphological studies of Ge growth on a Si(111) surface at the initial stages of epitaxy by means of scanning tunneling microscopy and high-resolution transmission electron mi...

    S. A. Teys, E. M. Trukhanov, A. S. Ilin, A. K. Gutakovskii… in JETP Letters (2010)

  18. No Access

    Article

    Initial stages of germanium growth on the Si(7 7 10) surface

    The initial stages of germanium growth on the Si(7 7 10) surface containing regular atomic steps with a height of three interplanar spacings were investigated using scanning tunneling microscopy. This surface ...

    R. A. Zhachuk, K. N. Romanyuk, S. A. Teys, B. Z. Olshanetsky in Physics of the Solid State (2009)

  19. No Access

    Article

    Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

    The effect of pulsed irradiation by a low-energy (50–250 eV) ion beam with a pulse duration of 0.5 s on the nucleation and growth of three-dimensional germanium islands during molecular-beam heteroepitaxy of G...

    J. V. Smagina, V. A. Zinovyev… in Journal of Experimental and Theoretical Ph… (2008)

  20. No Access

    Article

    Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy

    Lead island growth on the Si (7710) surface containing steps three interplanar spacings d (111) in height and on the Si (111) singular surface was studied by scanning tunneling microscopy at room ...

    R. A. Zhachuk, S. A. Teys, B. Z. Olshanetsky in Semiconductors (2007)

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