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Open AccessGrowth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation
For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hex...
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Article
Open AccessManifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal
The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interactio...
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Article
Open AccessSynthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix
The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are fo...
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Article
Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal
It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. Th...
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Article
Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots
Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstra...
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Article
Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range
The enhancement of the electric field in plasmonic nanostructures on a Si substrate in the near-infrared range is studied theoretically. Two-dimensional square arrays of circular holes of various diameters in ...
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Article
Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots
Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn do...
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Article
Localization of Surface Plasmon Waves in Hybrid Photodetectors with Subwavelength Metallic Arrays
The spectral characteristics of the hole photocurrent in plasmon photodetectors based on Ge/Si heterostructures with Ge quantum dots combined with regular arrays of subwavelength apertures of various shapes in...
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Article
Hall effect in hop** conduction in an ensemble of quantum dots
The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magneti...
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Article
Selective enhancement of the hole photocurrent by surface plasmon–polaritons in layers of Ge/Si quantum dots
It is found that the integration of Ge/Si heterostructures containing layers of Ge quantum dots with twodimensional regular lattices of subwave holes in a gold film on the surface of a semiconductor leads to t...
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Article
Photoluminescence enhancement in double Ge/Si quantum dot structures
The luminescence properties of double Ge/Si quantum dot structures are studied at liquid helium temperature depending on the Si spacer thickness d in QD molecules. A seven-fold increase in the integrated photolum...
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Article
Enhancement of the hole photocurrent in layers of Ge/Si quantum dots with abrupt heterointerfaces
The photoconductive gain, hole photocurrent spectra in the mid-infrared range, and band-to-band photoluminescence spectra in arrays of Ge/Si quantum dots with different elemental compositions of the heterointe...
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Article
Suppression of hole relaxation in small Ge/Si quantum dots
We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied ...
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Article
Temperature-stimulated transition from a macroscopic to a mesoscopic behavior of the hop** conductivity in a quantum-dot ensemble
A temperature-induced transition to the macroscopic behavior of the hop** conductivity is observed in Ge/Si quantum-dot heterostructures upon the investigation of light-induced mesoscopic fluctuations of the...
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Article
Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots
Electron states in ordered Ge/Si heterostructures with linear chains of quantum dots (QDs) were studied by the electron spin resonance (ESR) method. A new ESR signal with principal g-factor values g ...
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Article
Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots
Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been found that t...
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Article
Conductance through chains of Ge/Si quantum dots: Crossover from one-dimensional to quasi-one-dimensional hop**
Parallel chains of germanium quantum dots were grown on a patterned silicon (100) substrate prepared by the combination of nanoimprint lithography and ion irradiation. Strong anisotropy of the conductance betw...
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Article
Bidirectional photocurrent of holes in layers of Ge/Si quantum dots
Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak external electric fields have been studied. It has been established that the photocurrent of the holes in the photovoltaic...
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Article
Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots
The existence of the antibonding ground state of holes in artificial molecules, which are formed by the vertically coupled Ge/Si quantum dots, has been proved experimentally. This phenomenon is absent in natur...
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Article
Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots
We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the con...