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  1. No Access

    Article

    Direct One-Step Plasma-Chemical Synthesis of Nanostructured β-Ga2O3–GaN Thin Films of Various Compositions

    For the first time, nanostructured thin films of the β-Ga2O3−GaN system have been obtained by plasma-enhanced chemical vapor deposition (PECVD) on c-plane sapphire substrates. High-purity gallium metal, as well a...

    L. A. Mochalov, M. A. Kudryashov, M. A. Vshivtsev… in High Energy Chemistry (2024)

  2. No Access

    Article

    Study of the Abnormally High Photocurrent Relaxation Time in α-Ga2O3-Based Schottky Diodes

    Ga2O3 is a wide-bandgap material with a number of unique characteristics that make it a promising material for photonics: it is optically transparent to optical and near-ultraviolet radiation and has a high break...

    I. V. Schemerov, A. Yu. Polyakov, A. V. Almaev, V. I. Nikolaev… in Russian Microelectronics (2023)

  3. No Access

    Article

    Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

    The effect of the gaseous medium composition on the electrically conductive properties of In2O3–Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In2O

    V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov… in Technical Physics Letters (2023)

  4. No Access

    Article

    High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia

    The effect of H2, NH3, CO and O2 on the electrically conductive properties of In2O3 films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In2O3 films demonstrate gas s...

    D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov… in Semiconductors (2023)

  5. No Access

    Article

    Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure

    α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtai...

    D. A. Almaev, A. V. Almaev, V. V. Kopyev, V. I. Nikolaev… in Technical Physics Letters (2023)

  6. No Access

    Article

    Effect of Ambient Humidity on the Electrical Conductivity of Polymorphic Ga2O3 Structures

    The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapp...

    A. V. Almaev, V. I. Nikolaev, S. I. Stepanov, N. N. Yakovlev… in Semiconductors (2021)

  7. No Access

    Article

    Influence of Electrodes on the Parameters of Solar-Blind Detectors of UV Radiation

    The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magne...

    V. M. Kalygina, A. V. Tsymbalov, A. V. Almaev, Yu. S. Petrova in Semiconductors (2021)

  8. No Access

    Article

    Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3

    The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is studied. Both types of Ga2O3 films are obtained by hydrid...

    V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov… in Semiconductors (2020)

  9. No Access

    Article

    Synthesis and Gas Sensitivity of Thin Chromium Oxide Films

    Thin polycrystalline Cr2O3 films were obtained using RF magnetron sputtering followed by annealing in air at T = 673 K. The obtained films had grain diameters within 40–70 nm and a bandgap width of 3.3 ± 0.2 eV. ...

    A. V. Almaev, B. O. Kushnarev, E. V. Chernikov, V. A. Novikov in Technical Physics Letters (2020)

  10. No Access

    Article

    Properties of Resistive Structures Based on Gallium Oxide Polymorphic Phases

    The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga2O3) films is discussed. Ga2O3 films were deposited by t...

    V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov… in Technical Physics Letters (2020)

  11. No Access

    Article

    Anodic Gа2O3 Films Obtained by Oxidation of n-GaAs Plates in Galvanostatic Mode

    The electrical and photoelectrical characteristics of Ga2O3/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without the...

    Yu. S. Petrova, A. V. Almaev, V. M. Kalygina, E. V. Taller… in Russian Physics Journal (2020)

  12. No Access

    Article

    Solar-Blind UV Detectors Based on β-Ga2O3 Films

    Resistive-type structures based on gallium-oxide films are studied. The Ga2O3 films are produced by radio-frequency magnetron-assisted sputtering of a β-Ga2O3 (99.9999%) target onto unheated sapphire substrates w...

    V. M. Kalygina, A. V. Almaev, V. A. Novikov, Yu. S. Petrova in Semiconductors (2020)

  13. No Access

    Article

    Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation

    It is shown that NO2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO3:Au thin films activated by laser diode radiation with maximum intensity at 400 nm...

    A. V. Almaev, N. N. Yakovlev, E. V. Chernikov, O. P. Tolbanov in Technical Physics Letters (2019)

  14. No Access

    Article

    Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium

    The dependence of the characteristics of hydrogen sensors based on thin Pt/Pd/SnO2:Sb, Ag, Y and Ag/SnO2:Sb, Ag, Y films obtained by the method of magnetron sputtering at a direct current on the humidity level of...

    A. V. Almaev, V. I. Gaman in Russian Physics Journal (2018)

  15. No Access

    Article

    Effect of Additives of Pt, Pd, Ag, and Y in Thin Nanocrystalline SnO2 Films on the Characteristics of Resistive Hydrogen Sensors

    The results of studying electrical and gas sensitive characteristics of H2 sensors based on thin nanocrystalline SnO2 films with the Pt, Pd, and Ag dispersed layers deposited on the surface and Ag, Y, and Ag + Y ...

    E. Yu. Sevast’yanov, N. K. Maksimova, A. I. Potekaev… in Russian Physics Journal (2018)

  16. No Access

    Article

    Properties of Resistive Hydrogen Sensors as a Function of Additives of 3D-Metals Introduced in the Volume of Thin Nanocrystalline SnO2 Films

    Analysis of the results of studying electrical and gas sensitive characteristics of the molecular hydrogen sensors based on thin nanocrystalline SnO2 films coated with dispersed Au layers and containing Au+Ni and...

    E. Yu. Sevast’yanov, N. K. Maksimova, A. I. Potekaev… in Russian Physics Journal (2017)

  17. No Access

    Article

    Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

    Effect of hydrogen in the concentration range from 10 to 2000 ppm on the characteristics of sensors based on thin films of tin dioxide modified with gold (Au/SnO2:Sb, Au) is studied in the thermo-cyclic mode at t...

    A. V. Almaev, V. I. Gaman in Russian Physics Journal (2017)

  18. No Access

    Article

    Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture

    An expression is obtained for the energy band bending eφsH on the surface of the SnO2 film in the clean air + hydrogen mixture. It is assumed that the value of eφsH depends not only on the surface charge density ...

    V. I. Gaman, A. V. Almaev in Russian Physics Journal (2017)