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Article
Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure
α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtai...
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Article
Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3
The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is studied. Both types of Ga2O3 films are obtained by hydrid...
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Article
Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells
The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are p...
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Article
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitati...
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Article
Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pum**
We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superl...
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Article
Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures
The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN m...
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Article
Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density
Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum eff...