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    Article

    Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures

    IR semiconductor WGM lasers operating in the continuous-wave (CW) mode at a wavelength of 3.04 μm have been fabricated by metal-organic vapor-phase epitaxy on the basis of InAs/InAsSbP heterostructures. Their ...

    N. S. Averkiev, A. P. Astakhova, E. A. Grebenshchikova, N. D. Il’inskaya… in Semiconductors (2009)

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    Article

    Semiconductor WGM lasers for the mid-IR spectral range

    Disk-cavity whispering-gallery-mode (WGM) semiconductor lasers for the mid-IR spectral range have been developed. The specific properties of these devices are investigated.

    V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova… in Semiconductors (2005)