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9 Result(s)

within A. D. Bolshakov Remove this filter Magnetism, Magnetic Materials Remove this filter

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  1. No Access

    Article

    Lateral growth and shape of semiconductor nanowires

    The lateral growth of semiconductor nanowires and its influence on the nanowire shape in the case of nanocrystal formation according to the diffusion mechanism is theoretically studied. Possible types of the d...

    V. G. Dubrovskii, M. A. Timofeeva, M. Tchernycheva, A. D. Bolshakov in Semiconductors (2013)

  2. No Access

    Article

    Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

    Using methods of numerical simulation, the modes of operation are considered and structures are determined for solar cells of combined dimension based on a planar GaPNAs/Si heterostructure and an array of GaN ...

    A. M. Mozharov, D. A. Kudryashov, A. D. Bolshakov, G. E. Cirlin… in Semiconductors (2016)

  3. No Access

    Article

    Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

    In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied het...

    A. M. Mozharov, A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov… in Semiconductors (2018)

  4. No Access

    Article

    Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires

    In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fab...

    A. D. Bolshakov, L. N. Dvoretckaia, V. V. Fedorov, G. A. Sapunov… in Semiconductors (2018)

  5. No Access

    Article

    Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode

    Nowadays modern science and technology require development of efficient electromagnetic emitters covering far GHz and THz ranges. Semiconductor elements with negative differential resistance (NDR) such as Gunn...

    A. M. Mozharov, A. A. Vasiliev, F. E. Komissarenko, A. D. Bolshakov… in Semiconductors (2018)

  6. No Access

    Article

    Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching

    Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the ...

    V. V. Fedorov, A. D. Bolshakov, L. N. Dvoretckaia, G. A. Sapunov… in Semiconductors (2018)

  7. No Access

    Article

    Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes

    Transparency and sheet resistance measurements of transferred CNT film on glass substrate were performed. Effect of optical lithography and plasma treatment processes on CNT film sheet resistance was analyzed....

    D. M. Mitin, S. A. Raudik, A. M. Mozharov, A. D. Bolshakov, V. V. Fedorov… in Semiconductors (2019)

  8. No Access

    Article

    Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires

    GaP as well as GaAs has face-centered cubic crystal phase at standard conditions. Despite it, GaP and GaAs nanowires frequently grow in a metastable hexagonal crystal phase called wurtzite. In this work, stabl...

    N. V. Sibirev, V. V. Fedorov, D. A. Kirilenko, E. V. Ubiyvovk… in Semiconductors (2020)

  9. No Access

    Article

    Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires

    A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowi...

    N. V. Sibirev, Yu. S. Berdnikov, V. V. Fedorov, I. V. Shtrom… in Semiconductors (2022)