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  1. No Access

    Article

    Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

    The possibility of using lateral Ga(In)AsP nanostructures grown by the catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for pho...

    L. B. Karlina, A. S. Vlasov, M. Z. Shvarts, I. P. Soshnikov… in Semiconductors (2019)

  2. No Access

    Article

    Effect of the Conductive Channel Cut-Off on Operation of n+–n–n+ GaN NW-Based Gunn Diode

    Nowadays modern science and technology require development of efficient electromagnetic emitters covering far GHz and THz ranges. Semiconductor elements with negative differential resistance (NDR) such as Gunn...

    A. M. Mozharov, A. A. Vasiliev, F. E. Komissarenko, A. D. Bolshakov… in Semiconductors (2018)

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    Article

    Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium

    The results of studies of the surface of GaAs in the presence of indium and phosphorus surfactants are reported. It is shown that, as a result of their diffusion (annealing) at a temperature of 650–670°C, clus...

    A. S. Vlasov, L. B. Karlina, F. E. Komissarenko, A. V. Ankudinov in Semiconductors (2017)

  4. No Access

    Article

    Formation of metallic nanoislands in the process of electron irradiation of a thin gold film on glass

    It has been demonstrated experimentally that the local irradiation of a thin gold film on glass with electrons with an energy of 5 keV led to an increase in the thickness of the irradiated area. When the film ...

    F. E. Komissarenko, M. V. Zhukov, I. S. Mukhin, A. O. Golubok… in Technical Physics (2017)