Skip to main content

32 Result(s)

within I. V. Shtrom Remove this filter

previous disabled Page of 2
and

  1. No Access

    Article

    On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

    In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is...

    V. O. Gridchin, S. D. Komarov… in Journal of Surface Investigation: X-ray, S… (2024)

  2. No Access

    Article

    Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires

    A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowi...

    N. V. Sibirev, Yu. S. Berdnikov, V. V. Fedorov, I. V. Shtrom… in Semiconductors (2022)

  3. No Access

    Article

    Growth Kinetics of Planar Nanowires

    An approximate analytic equation is derived that describes the law of elongation of a semiconductor nanowire (NW) growing via the vapor–liquid–solid (VLS) mechanism in a substrate plane. Various growth regimes...

    V. G. Dubrovskii, I. V. Shtrom in Technical Physics Letters (2020)

  4. No Access

    Article

    Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires

    An expression for the free energy of nucleus formation from liquid phase of a catalyst during growth of III–V semiconductor nanowires (NWs) via the vapor–liquid–solid (VLS) mechanism has been derived with allo...

    V. G. Dubrovskii, A. S. Sokolovskii, I. V. Shtrom in Technical Physics Letters (2020)

  5. No Access

    Article

    Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots

    The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmui...

    A. I. Khrebtov, A. S. Kulagina, V. V. Danilov, E. S. Gromova… in Semiconductors (2020)

  6. No Access

    Article

    MBE-Grown InxGa1 –xAs Nanowires with 50% Composition

    In a particular case of Au-catalyzed InxGa1 –xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 –xAs nan...

    V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom… in Semiconductors (2020)

  7. Article

    Open Access

    Wurtzite AlGaAs Nanowires

    Semiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplore...

    L. Leandro, R. Reznik, J. D. Clement, J. Repän, M. Reynolds… in Scientific Reports (2020)

    Download PDF (2943 KB) View Article

  8. No Access

    Article

    Nonlinear Bleaching of InAs Nanowires in the Visible Range

    Spectral and nonlinear optical properties of InAs nanowires synthesized via molecular beam epitaxy suspended in isopropanol are studied in this work at room temperature. The absorption spectra with a character...

    A. S. Kulagina, A. I. Khrebtov, A. A. Ryzhov, V. V. Danilov… in Optics and Spectroscopy (2020)

  9. No Access

    Article

    The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

    We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 –xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon subst...

    N. R. Grigorieva, I. V. Shtrom, R. V. Grigoriev… in Technical Physics Letters (2019)

  10. No Access

    Article

    Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts

    Arrays of GaN nanowires (NWs) and nanotubes (NTs) have been grown by metalorganic vapor phase epitaxy using a gold–nickel film as the catalyst. The simultaneous formation of both NTs and NWs in one process in ...

    N. V. Sibirev, H. Huang, E. V. Ubyivovk, R. Lv, D. Zhao… in Technical Physics Letters (2019)

  11. No Access

    Article

    Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

    We present the results of photoluminescence measurements of AlxGa1 – xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1 – xAs nanowires were grown by molecular beam epit...

    I. V. Shtrom, K. P. Kotlyar, N. G. Filosofov, A. Yu. Serov… in Semiconductors (2018)

  12. No Access

    Article

    Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy

    The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/...

    A. M. Mizerov, S. N. Timoshnev, M. S. Sobolev, E. V. Nikitina… in Semiconductors (2018)

  13. No Access

    Article

    Solar Cell Based on Core/Shell Nanowires

    Arrays of Be-doped (Al,Ga)As core/shell nanowires are synthesized by molecular-beam epitaxy on a Si-doped n-GaAs (111)B substrate. A study of the photovoltaic properties of the structures under illumination with ...

    N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom… in Semiconductors (2018)

  14. No Access

    Article

    Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

    The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of...

    I. V. Shtrom, N. G. Filosofov, V. F. Agekian, M. B. Smirnov, A. Yu. Serov… in Semiconductors (2018)

  15. No Access

    Article

    Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field

    Light emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn0.45Mn0.15Te were investigated under the different excitation conditions. The...

    I. V. Shtrom, V. F. Agekyan, A. Yu. Serov, N. G. Filosofov… in Semiconductors (2018)

  16. No Access

    Article

    Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources

    III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this ...

    G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov… in Semiconductors (2018)

  17. No Access

    Article

    Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

    Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to ...

    R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov… in Technical Physics Letters (2018)

  18. No Access

    Article

    GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases

    A theoretical and experimental description of the synthesis of GaP nanowire crystals by molecularbeam epitaxy on Si(111) substrates with the use of gold as a catalyst is presented. The ratio between the fluxes...

    I. V. Shtrom, N. V. Sibirev, E. V. Ubiivovk, Yu. B. Samsonenko… in Semiconductors (2018)

  19. No Access

    Article

    MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

    The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of ...

    R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Soshnikov… in Semiconductors (2017)

  20. No Access

    Article

    Directional emission from beryllium doped GaAs/AlGaAs nanowires

    The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium do**, is studied. It is shown that an undoped sample posse...

    V. G. Talalaev, I. V. Shtrom, Yu. B. Samsonenko… in Technical Physics Letters (2017)

previous disabled Page of 2