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  1. No Access

    Chapter and Conference Paper

    Structural and morphological characterization of GaN/AlGaN quantum dots by transmission electron microscopy

    In recent years much attention has been devoted to GaN quantum dots (QDs) due to their potential application as light emitting diodes and lasers diodes operating in the ultra-violet range. QDs allow carriers l...

    M. Korytov, M. Benaissa, J. Brault… in EMC 2008 14th European Microscopy Congress… (2008)

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    Chapter and Conference Paper

    Contribution of low tension ion-milling to heterostructural semiconductors preparation

    Specimens of superior quality are required for quantitative Transmission Electron Microscopy. The classical preparation of heterostructural semiconductors includes stages of mechanical polishing followed by io...

    M. Korytov, O. Tottereau, J. M. Chauveau… in EMC 2008 14th European Microscopy Congress… (2008)

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    Chapter and Conference Paper

    STEM investigations of (In,Ga)N/GaN quantum wells

    Nanostructures of III-N semiconductors have a great commercial potential due to their optoelectronic properties. The structural and chemical characteristics of such structures determine the performance of the ...

    P. Manolaki, I. Häusler, H. Kirmse… in EMC 2008 14th European Microscopy Congress… (2008)

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    Chapter and Conference Paper

    Strain relaxation in (Al,Ga)N/GaN heterostructures

    Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...

    P Vennéguès, J M Bethoux, Z Bougrioua, M Azize… in Microscopy of Semiconducting Materials (2005)