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    Chapter and Conference Paper

    Strain relaxation in (Al,Ga)N/GaN heterostructures

    Strain relaxation mechanisms in metal-organic vapour phase epitaxy grown (Al,Ga)N/GaN heterostructures are presented. Relaxation first occurs through a 2D–3D transition. For pure AlN, misfit a-type dislocations a...

    P Vennéguès, J M Bethoux, Z Bougrioua, M Azize… in Microscopy of Semiconducting Materials (2005)