Abstract
In recent years much attention has been devoted to GaN quantum dots (QDs) due to their potential application as light emitting diodes and lasers diodes operating in the ultra-violet range. QDs allow carriers localisation thus diminishing the influence of the dislocations existing in III-nitrides films on light emission efficiency.
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Korytov, M., Benaissa, M., Brault, J., Huault, T., Vennéguès, P. (2008). Structural and morphological characterization of GaN/AlGaN quantum dots by transmission electron microscopy. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_152
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DOI: https://doi.org/10.1007/978-3-540-85226-1_152
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