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Chapter and Conference Paper
Improving Thermal Characteristics of Double-Sided Face Grinding Machines
The uneven heating of the bed is the main reason for changing the angular position of the grinding wheels in double-sided face grinders, which leads to an increase in the machining error. The nodes of the face...
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Chapter and Conference Paper
Method of Simulation of the Thermal Deformation Behavior of Double-Sided Face Grinding Machines
The paper presents a technique for numerical simulation of the thermal deformation behavior of the load-bearing system of a double-sided face grinder using the Ansys. The machine tool is considered in two mode...
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Chapter and Conference Paper
Experimental Thermal Performance Double-Sided Face Grinding Machine
The paper presents a description of the experimental thermal characteristics of a double-sided face grinding machine. Thermal characteristics in the form of time dependences of temperatures and displacements w...
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Chapter and Conference Paper
Feature of Predicting the Thermal Characteristics of Machine Tools Using Feedforward Neural Networks
The paper presents a method for predicting the thermal characteristics of machine tools using a feedforward neural network. The method was based on the results of full-scale and computational tests. Experiment...
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Chapter and Conference Paper
Methodology of Measuring Cutters by Using Coordinate Measuring Machine in Automatic Mode
The aim of the study was to develop a methodology for measuring the structural and geometric parameters of a straight bull-nose cutter. To test the effectiveness of the developed methodology for measuring the ...
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Chapter and Conference Paper
Application of Modal Analysis to Building Simulation Models of Thermal Processes in Machine Tools
In this paper, modal analysis is proposed to building simulation models of thermal processes in machine tools. The technique of building simulation models in Simulink in three ways is described. The first way ...
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Chapter and Conference Paper
Liquid Phase Epitaxy of SiC-AlN Solid Solutions
In this paper we described (SiC)1−x(AlN)x layers and pn structures grown by container free liquid phase epitaxy. Auger measurements have indicated that the concentration of the AlN component in the epitaxial laye...
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Chapter and Conference Paper
Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System
Cubic silicon carbide is a widegap semiconductor whose chemical and physical properties make it applicable for fabrication of electronic devices operating in extreme environments: high temperature, radiation e...
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Chapter and Conference Paper
Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD
The present, study reports research results of a dislocation structure of epitaxial layers SiC-3C/Si, grown by CVD without a buffer layer and by “buffer” technology. X-ray differential diffractometry and TEM w...