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  1. No Access

    Article

    Passivation of the GaP(111) surface by treatment in selenium vapors

    Results of examination of structural phase transitions on the GaP(111) surface after heat treatment in selenium vapors in a vacuum chamber with a quasi-closed volume are described. The electrophysical characte...

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov… in Technical Physics Letters (2014)

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    Article

    Water adlayers on aluminum oxide thin films

    The effect of saturated water vapor on the performance of quartz cavities covered by magnetronsputtered oxide films is considered. A technique for precisely estimating the influence of small vapor concentratio...

    D. S. Saiko, V. V. Ganzha, S. A. Titov, I. N. Arsent’ev… in Technical Physics (2009)

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    Article

    Passivating gallium arsenide surface by gallium chalcogenide

    We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and sca...

    N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, I. N. Arsent’ev… in Technical Physics Letters (2008)

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    Article

    Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide

    The diffusion of beryllium in indium phosphide (InP) has been studied. The temperature dependence of the diffusion coefficient can be described by the formula D = 6.3 × 10−5exp(−1.4/kT) [cm2/s], which yields D = ...

    V. V. Agaev, I. N. Arsent’ev, S. G. Metreveli… in Technical Physics Letters (2006)

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    Article

    Using axisymmetric potential in modeling crystal growth from melt

    A model describing the growth of AIIIAV semiconductor compounds from a melt has been developed based on an axisymmetric potential of pair interaction between atoms in the growing crystal and in the melt. Numerica...

    E. A. Shunikov, Yu. P. Khukhryansky, I. N. Arsent’ev in Technical Physics Letters (2005)

  6. No Access

    Article

    Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers

    The structures comprising three epitaxial InP layers—buffer (n ++), active (n), and contact (n +)—were grown by liquid phase epitaxy on porous and compact (control) InP(100) substrates. High quality of the active...

    I. N. Arsent’ev, M. V. Baidakova, A. V. Bobyl’, L. S. Vavilova… in Technical Physics Letters (2002)

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    Article

    On the possible mechanism of crystal growth from melt under zero gravity conditions

    A possible mechanism of the growth of semiconductor single crystals from melt under zero gravity conditions is considered. The results of computer simulation performed by the molecular dynamics method for a th...

    S. V. Kotov, A. R. Lyutikov, Yu. P. Khukhryansky… in Technical Physics Letters (2002)

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    Article

    Multiwell laser heterostructures fabricated by liquid-phase epitaxy

    A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distributi...

    A. Yu. Leshko, A. V. Lyutetskii, A. V. Murashova… in Technical Physics Letters (1998)