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  1. No Access

    Article

    Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

    In this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic ...

    M. Ghisoni, A. W. Rivers, K. Lee, G. Parry, X. Zhang… in MRS Online Proceedings Library (1992)

  2. No Access

    Article

    Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

    High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL)...

    JPR David, R. Grey, G. J. Rees, A. S. Pabla, T. E. Sale… in Journal of Electronic Materials (1994)

  3. No Access

    Article

    Book reviews

    G. Hill, A. J. Seeds, C. C. Philips in Optical and Quantum Electronics (1995)

  4. No Access

    Article

    Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots: Observation of a Permanent Dipole Moment

    Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, studied as a function of applied electric field, is used to probe the nature of the confined electronic states. A field asymmetry of the quan...

    P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick… in MRS Online Proceedings Library (1999)

  5. No Access

    Article

    1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

    Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/I...

    Ray Murray, Caroline Bryan, Chris Button, D. Spikes… in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

    The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2003)

  7. No Access

    Article

    Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

    The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition wa...

    W. S. Tan, P. A. Houston, G. Hill, R. J. Airey… in Journal of Electronic Materials (2004)

  8. No Access

    Article

    Spectral response and I-V characteristics of large well number multi quantum well solar cells

    The inclusion of quantum wells in p-i-n solar cells leads to both an increase in photocurrent and a reduction in open circuit voltage. It has been shown that up to 50 shallow strain-balanced GaAsP/InGaAs quant...

    M. C. Lynch, I. M. Ballard, D. B. Bushnell, J. P. Connolly… in Journal of Materials Science (2005)