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  1. No Access

    Article

    Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots

    The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground ...

    A. N. Sofronov, R. M. Balagula, D. A. Firsov, L. E. Vorobjev… in Semiconductors (2018)

  2. No Access

    Article

    Lateral photoconductivity in structures with Ge/Si quantum dots

    The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent ...

    V. Yu. Panevin, A. N. Sofronov, L. E. Vorobjev, D. A. Firsov… in Semiconductors (2013)

  3. No Access

    Article

    Pseudomorphic GeSn/Ge (001) heterostructures

    The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free...

    A. A. Tonkikh, V. G. Talalaev, P. Werner in Semiconductors (2013)

  4. No Access

    Article

    Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is...

    V. Ya. Aleshkin, A. A. Dubinov, M. N. Drozdov, B. N. Zvonkov… in Semiconductors (2013)

  5. No Access

    Article

    Photoinduced and equilibrium optical absorption in Ge/Si quantum dots

    The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot f...

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin, V. Yu. Panevin… in Semiconductors (2012)

  6. No Access

    Article

    Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

    InGaAs/GaAs and Ge/Si light-emitting heterostructures with active regions consisting of a system of different-size nanoobjects, i.e., quantum dot layers, quantum wells, and a tunneling barrier are studied. The...

    V. G. Talalaev, A. A. Tonkikh, N. D. Zakharov, A. V. Senichev, J. W. Tomm… in Semiconductors (2012)

  7. No Access

    Article

    Wannier-stark effect in Ge/Si quantum dot superlattices

    Deep level transient spectroscopy (DLTS) measurements were performed to study electron emission from quantum states in a 20-layer Ge quantum-dot superlattice (QDSL) in a Ge/Si p-n heterostructure. It was establis...

    M. M. Sobolev, G. É. Cirlin, A. A. Tonkikh, N. D. Zakharov in Semiconductors (2008)

  8. No Access

    Article

    Resonances related to an array of InAs quantum dots and controlled by an external electric field

    Photoluminescence of multilayer structures with InAs quantum dots grown in the p-n junction in GaAs by molecular-beam epitaxy is studied. Formation of vertical columns of quantum dots is verified by the data of t...

    V. G. Talalaev, B. V. Novikov, A. S. Sokolov, I. V. Strom, J. W. Tomm… in Semiconductors (2007)

  9. No Access

    Article

    Circularly polarized photoluminescence related to A(+) centers in GaAs/AlGaAs quantum wells

    Magnetic-field-induced circular polarization of the photoluminescence peak related to A(+) centers in quantum wells is measured for the first time. It is shown that, in a magnetic field of 4 T, the polarization d...

    P. V. Petrov, Yu. L. Ivanov, K. S. Romanov, A. A. Tonkikh, N. S. Averkiev in Semiconductors (2006)

  10. No Access

    Article

    Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz

    A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...

    N. S. Boltovets, V. N. Ivanov, A. E. Belyaev, R. V. Konakova… in Semiconductors (2006)

  11. No Access

    Article

    The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy

    The structural and optical properties of arrays of InAs quantum dots grown on GaAs substrates at relatively low temperatures (250 and 350°C) and with various degrees of misorientation of the surface are studie...

    A. A. Tonkikh, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko… in Semiconductors (2006)

  12. No Access

    Article

    The band structure and photoluminescence in a Ge0.8Si0.2/Ge0.1Si0.9 superlattice with vertically correlated quantum dots

    The energy band diagram of the multilayered Ge0.8Si0.2/Ge0.1Si0.9 heterostructures with vertically correlated quantum dots is analyzed theoretically. With regard to fluctuations of the thickness layer in the colu...

    N. V. Sibirev, V. G. Talalaev, A. A. Tonkikh, G. E. Cirlin… in Semiconductors (2006)

  13. No Access

    Article

    The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates

    Deep-level transient spectroscopy is used to study charge-carrier emission from the states of separate quantum dots in InAs/GaAs p-n heterostructures grown on (100)-and (311)A-oriented GaAs substrates in relation...

    M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov… in Semiconductors (2005)

  14. No Access

    Article

    The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system

    The results of experimental and theoretical studies of quantum dot formation in an InAs/GaAs(100) system in the case of a subcritical width of the deposited InAs layer (1.5–1.6 monolayers) are presented. It is...

    Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko… in Semiconductors (2005)

  15. No Access

    Article

    Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb

    Atomic-force microscopy is used to study the behavior of an array of Ge islands formed by molecular-beam epitaxy on an Si (100) surface in the presence of an antimony flux incident on the surface. It is shown ...

    G. E. Cirlin, V. G. Dubrovskii, A. A. Tonkikh, N. V. Sibirev… in Semiconductors (2005)

  16. No Access

    Article

    The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

    The formation of GaAs and AlGaAs nanowhiskers using molecular-beam epitaxy on GaAs (111)B surfaces activated with Au is theoretically and experimentally studied. It is experimentally shown that nanowhiskers wh...

    G. E. Cirlin, V. G. Dubrovskii, N. V. Sibirev, I. P. Soshnikov… in Semiconductors (2005)

  17. No Access

    Article

    Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules

    Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron an...

    L. E. Vorob’ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov… in Semiconductors (2005)

  18. No Access

    Article

    The engineering and properties of InAs quantum dot molecules in a GaAs matrix

    Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by tran...

    Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov… in Semiconductors (2005)

  19. No Access

    Article

    Localization of holes in an InAs/GaAs quantum-dot molecule

    Deep-level transient spectroscopy is used to study the emission of holes from the states of a vertically coupled system of InAs quantum dots in p-n InAs/GaAs heterostructures. This emission was considered in rela...

    M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov… in Semiconductors (2005)

  20. No Access

    Article

    Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100)

    Morphological properties of Ge nanoscale island arrays formed on the Si(100) surface during molecular beam epitaxy are studied using reflection high-energy electron diffraction and atomic-force microscopy. It ...

    A. A. Tonkikh, G. E. Cirlin, V. G. Dubrovskii, V. M. Ustinov, P. Werner in Semiconductors (2004)

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