2,847 Result(s)
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Article
**e Wu
Materials Science, general
Nanotechnology
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Article
Oxygen-Trap** and Oxidation Induced by Laser Irradiation in Silicon
Rapid oxidation in silicon induced by nanosecond UV laser pulses has been recently reported [1]. A significant amount of oxygen was observed to be incorporated in the regrown silicon layer when irradiation took p...
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Salt Creep Design Consideration for Underground Nuclear Waste Storage
This paper summarizes the creep consideration in the design of nuclear waste storage facilities in salt, describes the non-linear analysis method for evaluating the design adequacy, and presents computational ...
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Article
Surface Morphology and Electronic Properties of ErSi2
The surface of ErSi2, formed by the reaction of thin erbium layers with a single-crystal silicon substrate, is typically dominated by deeply penetrating regularly shaped pits. These pits are shown to have detrime...
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Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs
Refractory metal silicides have been shown to form stable Schottky barriers on GaAs up to an annealing temperature of ∼850°C. In this study, the metallurgical and electrical stability of near noble metal (Pd a...
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Article
Transient Annealing of Boron Implanted Devices
Shallow-junction semiconductor devices have been fabricated using ion implantation and transient annealing with a Vari an IA-200 isothermal anneal er. Boron implanted diodes, npn bipolar transistors and CMOS r...
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Two Dimensional Numerical Thermal Analysis of Silicon on Insulator Recrystallization Processes by a Moving Heat Source
The moving-zone melt recrystallization of polysilicon on insulator substrate has been studied with computer simulation methods. The most important parameters such as upper strip heater moving velocity, the pow...
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Structure and Recalescence Behavior of Undercooled Nickel-Tin Alloys
Small nickel-tin alloy samples (3.2 g) were bulk undercooled in a Pyrex-brand borosilicate glass medium using a levitation melter. Recalescence was directly observed utilizing a rapid thermal measurement syste...
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A Comparison of Thermal, Line-Source Electron Beam and CW Laser Annealing for the Fabrication of ErSi2 Schottky Barrier on Si
ErSi2 contacts formed by reacting Er with single crystal silicon using conventional furnace heat treatment are dominated by pits. Recently rapid electron and laser beam heating have been used to form pit-free ErS...
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The Measurement of Silicide Schottky Barrier Heights by Use of Photo-Voltaic Techniques
Schottky barrier structures often exhibit forward bias current voltage characteristics possessing a marked deviation from ideal behavior. In many cases, this deviation can be attributed to the influence of an ...
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Article
The Role of Phonon Dispersion in Controlling Atomic Rearrangement in Solid Solutions
The elastic energy of a solid solution of atoms of different sizes can be written as a Fourier sum with coefficients as a function of position in reciprocal space. Each coefficient is made up of three componen...
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Photodetector Arrays in Laser-Recrystallized Silicon Integrated with an Optical Waveguide
Integrated detection of light propagating in an optical waveguide by a photodetector array fabricated directly on the waveguide surface is demonstrated. Laser recrystallization of LPCVD polysilicon patterned w...
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Article
Electron Trap**/Detrap** in Thin SiO2 Under High Fields
A constant alternating current stressing technique is employed to study the electron trap** and detrap** characteristics within a layer of thin silicon dioxide (∼ 100 Å). A two-charge centroid model is pro...
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Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β = 12, τr ≤ 30μs)
An n+ /i/p /i/n+ amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 μS This new structure of bipolar transistor has a very thin base (200Å),...
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Article
Metal-Germanium Contacts and Germanide Formation
In this study, we survey germanide formation and characterize Schottky-barrier properties for a number of representative metals on Ge (Al, Ag, Au, Er, Ni, Pd, Pt, Ta and Ti). It is found that the germanide for...
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Comparison of Structures of Gas Atomized and of Emulsified Highly Undercooled Ni-Sn Alloy Droplets
A comparison is made of microstructures of droplets of Ni-Sn alloys rapidly solidified (a) by gas atomization and (b) in a glass emulsifying medium. Cooling rate of the gas atomized particles ranged from 103 to 1...
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Article
Silicide-Silicon Interface States
The existence and nature of localized states at metal-semiconductor interfaces are long-standing scientific issues that have not been resolved. As device dimensions continue to shrink and packing density conti...
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Study Of Nb/Si Multilayers
A systematic study of superconducting Tc, Hc and also the behavior of resistivity of Nb/Si multilayers is reported. Nb and Si layers with different thicknesses were deposited alternatively in an UHV two electr...
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Solidification of Undercooled Ni-Sn Eutectic Alloy Under Microgravity Conditions in the Space
The Space Shuttle Columbia carried an Alloy Undercooling Experiment on its STS 61-C mission in January, 1986. The experiment was performed in the electromagnetic levitator (EML) designed and produced by the Ge...
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Variation in the Properties of Superlattices with Band Offsets
The implications for recent reports of large valence band offsets the HgTe-CdTe heterojunction are examined. The variation of the band gap and effective mass for transport normal to the layers in the superlatt...
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Molecular Mechanism of Deformation in Epoxies – A Neutron Scattering Study
Neutron scattering was used to investigate the molecular mechanism of large strain deformation in epoxies. Partially deuterated diglycidyl ether of bisphenol A (DGEBA) was cured with either tri- or di-amines o...
