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  1. No Access

    Article

    Deep Levels Associated with Oxygen Precipitation in CZ Silicon and Correlation with Minority Carrier Lifetimes

    A dominant electron trap in boron-doped CZ silicon at Ec −0.41 ± 0.02 eV with a electron capture cross section >10−14 cm2 has been observed with DLTS in 2-step annealed (16 hrs at 800°C + 16 hrs at 1050°C) seed e...

    S. S. Chan, C. J. Varker, J. D. Whitfield… in MRS Online Proceedings Library (1985)

  2. No Access

    Article

    Oxygen Implanted Layers in Silicon Electrical and Microstructural Characterization

    We report on an investigation of ‘buried’ oxygen implants formed by O+ implantation at 400 KeV and 3.5 MeV into p-type CZ (100) wafers with a dopant density NA ≈ 1015 cm−3. Peak concentrations of 1 × 1019 cm−3 to...

    C. J. Varker, S. R. Wilson, S. S. Chan, J. D. Whitfield… in MRS Online Proceedings Library (1985)

  3. No Access

    Article

    Transient Annealing of Boron Implanted Devices

    Shallow-junction semiconductor devices have been fabricated using ion implantation and transient annealing with a Vari an IA-200 isothermal anneal er. Boron implanted diodes, npn bipolar transistors and CMOS r...

    S. R. Wilson, W. M. Paulson, C. J. Varker, A. Lowe… in MRS Online Proceedings Library (1983)

  4. No Access

    Article

    Oxygen Precipitation in Silicon - Its Effects on Minority Carrier Recombination and Generation Lifetime

    The effects of oxygen precipitation on the minority carrier recombination lifetime (τR) and the carrier generation lifetime (τG) have been characterized for a ‘typical’ silicon crystal grown with the Czochralski ...

    C. J. Varker, J. D. Whitfield, P. L. Fejes in MRS Online Proceedings Library (1982)

  5. No Access

    Chapter

    SEM Methods for the Characterization of Semiconductor Materials and Devices

    The SEM has been used extensively as an analytical tool for high resolution surface microscopy [1,2]. When it is applied in this conventional mode, using secondary electron emission, it offers great depth of f...

    C. J. Varker in Nondestructive Evaluation of Semiconductor Materials and Devices (1979)

  6. No Access

    Article

    On the use of the scanning electron microscope for kinetic studies

    C. J. Varker, K. V. Ravi in Metallurgical Transactions (1973)

  7. No Access

    Article

    Phase transformations in Au−Si alloys investigated by the SEM operated in the electron beam induced current mode

    K. V. Ravi, C. J. Varker in Metallurgical Transactions (1971)

  8. No Access

    Chapter

    Experimental techniques for the plastic deformation of metal foils in the electron microscope

    Several investigators have found that individual dislocations are visible when suitable thin metal foils are viewed using transmission electron microscopy (1–3). The dislocations can be made to move through the f...

    H. G. F. Wilsdorf, L. Cinquina, C. J. Varker in Verhandlungen (1960)

  9. No Access

    Chapter and Conference Paper

    Experimental techniques for the plastic deformation of metal foils in the electron microscope

    Several investigators have found that individual dislocations are visible when suitable thin metal foils are viewed using transmission electron microscopy (1–3). The dislocations can be made to move through the f...

    H. G. F. Wilsdorf, L. Cinquina, C. J. Varker in Physikalisch-Technischer Teil (1960)

  10. No Access

    Chapter

    Kristallbau-Fehler und Versetzungen

    The contrast on transmission micrographs of crystals is mainly due to local differences in the intensities of the Bragg diffracted beams. Since the wavelength of the electrons in electron microscopes operating...

    P. B. Hirsch, A. Howie, M. J. Whelan… in Vierter Internationaler Kongress für Elekt… (1960)