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  1. No Access

    Article

    Adsorption of Oxygen in Laser-Induced Amorphous Silicon

    Amorphous silicon has been produced on a single crystalline silicon surface by intense UV laser radiation at 266 nm followed by rapid quenching. In addition, formation of oxide of several tens of nanometers ha...

    Yung S. Liu, S. W. Chiang, F. Bacon in MRS Online Proceedings Library (2011)

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    Article

    Compositional Analysis and Electrical Property Measurements of CW Laser-Annealed InSb

    Characteristics of CW Ar-ion laser annealed InSb has been studied; properties include stoichiometric composition analysis and electrical C-V measurements. The stoichiometry compositions of laser-annealed sampl...

    Yung S. Liu, C. Y. Wei, W. Tantraporn, S. W. Chiang… in MRS Online Proceedings Library (1981)

  3. No Access

    Article

    Oxygen-Trap** and Oxidation Induced by Laser Irradiation in Silicon

    Rapid oxidation in silicon induced by nanosecond UV laser pulses has been recently reported [1]. A significant amount of oxygen was observed to be incorporated in the regrown silicon layer when irradiation took p...

    Yung S. Liu, Shin-Wu Chiang, W. Katz in MRS Online Proceedings Library (1981)