Abstract
The surface of ErSi2, formed by the reaction of thin erbium layers with a single-crystal silicon substrate, is typically dominated by deeply penetrating regularly shaped pits. These pits are shown to have detrimental effects on the electronic performance of Schottky barrier diodes. Surface pits may be reduced in density or eliminated entirely (i) by the use of silicon substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition, (ii) by means of ion irradiation techniques or (iii) by reacting erbium with an amorphous silicon (a-Si) layer. In this investigation, planar ErSi2 layers (pit free) are made using the third approach with a sample structure of a-Si/Er/c-Si where c-Si denotes crystalline silicon. The fast reaction between a-Si and erbium leads to a planar sample structure of ErSi2/c-Si with little or no reaction between erbium and the c–Si substrate. The electronic performance of pit-free ErSi2 diodes made in this manner is shown to be much superior to that of diodes made by reacting erbium with silicon substrates.
Similar content being viewed by others
References
J. E. E. Baglin, F. M. d’Heurle and C. S. Petersson, Appl. Phys. Lett., 36 (1980) 594.
R. D. Thompson, B. Y. Tsaur and K. N. Tu, Appl. Phys. Lett., 38 (1981) 535.
J. E. E. Baglin, F. M. d’Heurle and C. S. Petersson, J. Appl. Phys., 52 (1981) 2841.
S. S. Lau, C. S. Pai, C. S. Wu, T. F. Kuech and B. X. Liu, Appl. Phys. Lett., 41 (1982) 77.
B. Y. Tsaur and L. S. Hung, Appl. Phys. Lett., 37 (1980) 922.
K. N. Tu, R. D. Thompson and B. Y. Tsaur, Appl. Phys. Lett., 38 (1981) 626.
H. Norde, J. de Sousa Pires, F. M. d’Heurle, F. Pesavento, C. S. Petersson and P. A. Tove, Appl. Phys. Lett., 38 (1981) 865.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wu, C.S., Lau, S.S., Kuech, T.F. et al. Surface Morphology and Electronic Properties of ErSi2. MRS Online Proceedings Library 18, 175–182 (1982). https://doi.org/10.1557/PROC-18-175
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-18-175