26 Result(s)
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Article
Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
InGaAs/GaAs and Ge/Si light-emitting heterostructures with active regions consisting of a system of different-size nanoobjects, i.e., quantum dot layers, quantum wells, and a tunneling barrier are studied. The...
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Article
Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
The results of studies of the optical absorption spectra in Ge/Si quantum dot structures in the mid-infrared region are reported. Two types of structures different in terms of the method used for quantum dot f...
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Article
Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells
GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is...
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Article
Pseudomorphic GeSn/Ge (001) heterostructures
The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free...
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Article
Lateral photoconductivity in structures with Ge/Si quantum dots
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent ...
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Article
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground ...
