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Showing 81-100 of 1,930 results
  1. Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

    The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to...

    Shi-**an Guan, Tilo H. Yang, ... Yann-Wen Lan in npj 2D Materials and Applications
    Article Open access 07 February 2023
  2. Introduction

    The introduction sets the context and the motivations of this thesis. First, key-features and current challenges of fibre-optics communication...
    Chapter 2023
  3. Ballistic 2D MoS2 transistors with ultra-high on-state currents

    Ying Li, Zongmeng Yang, ... **g Lu in Science China Materials
    Article 27 June 2024
  4. FinFETs based on layered 2D semiconductors

    Theresia Knobloch, Tibor Grasser in Science China Materials
    Article 18 July 2023
  5. Dimensional Effect on Analog/RF Performance of Dual Material Gate Junctionless FinFET at 7 nm Technology Node

    Fully Depleted Silicon On Insulator (FDSOI) structures are present-era technology as it has enhanced control over Short Channel Effects in the...

    Rambabu Kusuma, V. K. Hanumantha Rao Talari in Transactions on Electrical and Electronic Materials
    Article 08 May 2023
  6. Recent developments in implantable neural probe technologies

    Understanding neural circuit functions requires tools that can interrogate the activity of a large number of neurons over extended periods of time....

    Hongyu Chen, Ying Fang in MRS Bulletin
    Article 12 May 2023
  7. Active pixel sensor matrix based on monolayer MoS2 phototransistor array

    In-sensor processing, which can reduce the energy and hardware burden for many machine vision applications, is currently lacking in state-of-the-art...

    Akhil Dodda, Darsith Jayachandran, ... Saptarshi Das in Nature Materials
    Article 17 November 2022
  8. Integrated nonlinear photonics in the longwave-infrared: A roadmap

    Abstract

    This article presents an overview of the current status and future prospects of integrated nonlinear photonics in the long-wave infrared...

    Dingding Ren, Chao Dong, David Burghoff in MRS Communications
    Article Open access 22 August 2023
  9. Insight of surface treatments for CMOS compatibility of InAs nanowires

    A CMOS compatible process is presented in order to grow self-catalyzed InAs nanowires on silicon by molecular beam epitaxy. The crucial step of this...

    Daya S. Dhungana, Anne Hemeryck, ... Sébastien R. Plissard in Nano Research
    Article 13 December 2018
  10. Quantum Molecular Devices Toward Large-Scale Integration

    We introduce a new strategy for develo** practical molecular devices that combine molecular and Si electronics. A noteworthy aspect of our devices...
    Ryoma Hayakawa, Toyohiro Chikyow, Yutaka Wakayama in System-Materials Nanoarchitectonics
    Chapter 2022
  11. FBAR Gas Sensors

    Small-sized, high-sensitivity, and low-cost sensors are required for gas-sensing applications because of their critical role in environmental...
    Zilun Wang, Xueyou Sun, ... Wei Pang in Piezoelectric Sensors
    Chapter 2023
  12. Reconfigurable transistors based on van der Waals heterostructures

    Reconfigurable transistors can enable the design of highly compact logic circuits to realize more complex systems due to their ability to program...

    Junzhe Kang, Shaloo Rakheja, Wenjuan Zhu in MRS Advances
    Article 01 February 2023
  13. Synaptic a-Si:H/a-Ga2O3 phototransistor inspired by the phototaxis behavior of organisms with all-optical and all-electrical stimulation modes

    To improve neuromorphic computing performance, neuromorphic system components should mimic the behaviors of organic systems. In this study, a...

    Youngbin Yoon, Youngki Kim, ... Myunghun Shin in Nano Research
    Article 18 June 2024
  14. Spin logic devices based on negative differential resistance-enhanced anomalous Hall effect

    Owing to rapid developments in spintronics, spin-based logic devices have emerged as promising tools for next-generation computing technologies. This...

    Hongming Mou, Ziyao Lu, ... **aozhong Zhang in International Journal of Minerals, Metallurgy and Materials
    Article 27 May 2024
  15. Gate dielectric based steady state & transient analysis of channel characteristics for organic thin-film transistors

    Gate dielectric materials play a crucial role in the design of organic thin-film transistors. The effects of the low-k and high-k gate dielectric...

    Article 08 November 2023
  16. Hydrogels and conductive hydrogels for implantable bioelectronics

    Hydrogels are a class of soft materials, which display unique biomimetic properties to biological tissues. Their mechanical properties, high water...

    Kutay Sagdic, Emilio Fernández-Lavado, ... Stéphanie P. Lacour in MRS Bulletin
    Article Open access 19 May 2023
  17. A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

    A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which...

    **aoshi **, Yicheng Wang, ... Jong-Ho Lee in Nanoscale Research Letters
    Article Open access 08 June 2021
  18. A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

    This comprehensive review delves into the intricate realm of GaN-based metal–oxide–semiconductor (MOS) high-electron-mobility transistors (HEMTs),...

    Gauri Deshpande, Sandip Bhattacharya, ... D. Nirmal in Journal of Electronic Materials
    Article 04 June 2024
  19. Inorganic Perovskite Electronic Devices

    In recent years, inorganic perovskite materials have gained wide applications in fields such as solar cells, lasers, and optoelectronic detectors due...
    Zhigang Zang, Shuangyi Zhao, ... Huaxin Wang in Inorganic Perovskite Materials and Devices
    Chapter 2024
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