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Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs
We have studied the Si do** efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570 °C. Particularly, for samples grown at ~480 °C, the do...
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Article
Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge
The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual orderin...