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    Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

    The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual orderin...

    N.M. Liao, W. Li, Y.D. Jiang, Y.J. Kuang, K.C. Qi, Z.M. Wu, S.B. Li in Applied Physics A (2008)