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Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

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Abstract

The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual ordering of the amorphous network, both in the near surface and interior region on increasing the silane-gas temperature. In addition, the increase in the gas temperature leads to an improved ordering of amorphous network on the short and intermediate scales towards the surface of a-Si:H thin films. Post-annealing at 250 °C for 3 h mainly leads to a short and intermediate range improvement in the interior region of the films. Our present results suggest that a-Si:H thin films with better quality could be deposited at higher silane-gas temperature.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China

    N.M. Liao, W. Li, Y.D. Jiang, Z.M. Wu & S.B. Li

  2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China

    Y.J. Kuang & K.C. Qi

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  1. N.M. Liao
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  2. W. Li
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  3. Y.D. Jiang
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  4. Y.J. Kuang
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  6. Z.M. Wu
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  7. S.B. Li
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Correspondence to W. Li.

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PACS

63.50.+x; 61.43.-j; 75.40.-s

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Liao, N., Li, W., Jiang, Y. et al. Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge. Appl. Phys. A 91, 349–352 (2008). https://doi.org/10.1007/s00339-008-4413-6

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  • DOI: https://doi.org/10.1007/s00339-008-4413-6

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