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Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge
The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy. The results show that there exists a gradual orderin...
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Article
Surface modification and characterization of indium–tin oxide for organic light-emitting devices
We used various treatment methods such as ethanol treatment, sodium hydroxide solution treatment, sulfur acid treatment, and oxygen plasma treatment to modify the surface of indium–tin oxide (ITO) substrates f...