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Article
Open AccessNear ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity
All solid-state lithium-ion transistors are considered as promising synaptic devices for building artificial neural networks for neuromorphic computing. However, the slow ionic conduction in existing electroly...
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Article
Open AccessAtomic View of Filament Growth in Electrochemical Memristive Elements
Memristive devices, with a fusion of memory and logic functions, provide good opportunities for configuring new concepts computing. However, progress towards paradigm evolution has been delayed due to the limi...
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Article
Open AccessEvolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. ...
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Article
Open AccessImpact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bia...
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Article
Open AccessFormation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 ...
