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Article
Open AccessUnderstanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching mechanism through redox reaction in H2O2
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Article
Open AccessNegative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiOx/TiN structure have been investigated for the first ti...
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Article
Open AccessDetection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure
A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detec...
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Article
Open AccessTemperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have ...
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Article
Open AccessResistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure
It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using d...
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Article
Open AccessObservation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x /TiO x /TiN Structure
The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/CrO x /TiO x /TiN...
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Article
Open AccessConductive-bridging random access memory: challenges and opportunity for 3D architecture
The performances of conductive-bridging random access memory (CBRAM) have been reviewed for different switching materials such as chalcogenides, oxides, and bilayers in different structures. The structure cons...
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Article
Open AccessImpact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory devic...
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Article
Open AccessRRAM characteristics using a new Cr/GdOx/TiN structure
Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm2 have been reported in this study. Polycrystalline GdOx film ...
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Article
Open AccessCopper pillar and memory characteristics using Al2O3 switching material for 3D architecture
A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under exter...
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Article
Open AccessSelf-compliance RRAM characteristics using a novel W/TaO x /TiN structure
Self-compliance resistive random access memory (RRAM) characteristics using a W/TaO x /TiN structure are reported for the first time. A high-resolution transmission electron micr...
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Article
Open AccessTime-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure
Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are im...
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Article
Open AccessEnhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
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Article
Open AccessEnhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO x /GdO x /W cross-point memories
Enhanced resistive switching phenomena of IrO x /GdO x /W cross-point memory devices have been observed as compared to the via-hole devices. The...
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Article
Open AccessSelf-compliance-improved resistive switching using Ir/TaO x /W cross-point memory
Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaO x /W have been inves...
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Article
Open AccessComparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories
Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO x /W cross-points has been reported under low current compliances (...
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Article
Open AccessRetraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
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Article
Open AccessTaO x -based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μ...
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Article
Open AccessImpact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bia...
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Article
Open AccessRETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
