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Article
Oriented lateral growth of two-dimensional materials on c-plane sapphire
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semicon...
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Article
Open AccessGrowth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon
Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing t...
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Protocol
Erratum to: Microgrooved Surface Modulates Neuron Differentiation in Human Embryonic Stem Cells
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Protocol
Microgrooved Surface Modulates Neuron Differentiation in Human Embryonic Stem Cells
Stem cell-based therapies have drawn intensive attention in the neuronal regenerative fields. Several studies have revealed that stem cells can serve as an inexhaustible source for neurons for transplantation ...
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Article
Open AccessTotal ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device
The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance...
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Article
Open AccessFluorinated Graphene as High Performance Dielectric Materials and the Applications for Graphene Nanoelectronics
There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (flu...
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Article
Open AccessEnhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
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Article
Open AccessRetraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
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Article
Open AccessImpact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bia...
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Article
Open AccessRETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
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Article
Open AccessEnhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.2Se0.8/W structures, including stable AC endurance (>105 cycles), ...
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Article
Open AccessFormation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 ...
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Article
Open AccessImmobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment
Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatmen...
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Article
Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides
The electrical characteristics of thin gate dielectrics prepared by low temperature (850 'C) two-step N2O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then an...
