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Open AccessGate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication o...
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Article
Open AccessMarginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
A metallic state with a vanishing activation gap, at a filling factor \(\nu = 8/5\) ν ...
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Open AccessStudy of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...
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Article
Open AccessVirtual-photon-mediated spin-qubit–transmon coupling
Spin qubits and superconducting qubits are among the promising candidates for realizing a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of e...
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Open AccessAuger-spectroscopy in quantum Hall edge channels and the missing energy problem
Quantum Hall edge channels offer an efficient and controllable platform to study quantum transport in one dimension. Such channels are a prospective tool for the efficient transfer of quantum information at th...
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Open AccessCoherent microwave-photon-mediated coupling between a semiconductor and a superconducting qubit
Semiconductor qubits rely on the control of charge and spin degrees of freedom of electrons or holes confined in quantum dots. They constitute a promising approach to quantum information processing, complement...
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Article
Open AccessLoading a quantum-dot based “Qubyte” register
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a ...
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Open AccessCyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetores...
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Article
Open AccessSignatures of transient Wannier-Stark localization in bulk gallium arsenide
Many properties of solids result from the fact that in a periodic crystal structure, electronic wave functions are delocalized over many lattice sites. Electrons should become increasingly localized when a str...
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Open AccessCoherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs ...
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Open AccessB-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system
We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid hel...
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Open AccessMutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-cu...
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Open AccessTunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system
Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown ...
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Open AccessComparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation
A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized mic...
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Open AccessAnomalous resistance overshoot in the integer quantum Hall effect
In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within ...
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Open AccessSize-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insi...
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Quantum interference and phonon-mediated back-action in lateral quantum-dot circuits
You influence a system by measuring it. This back-action is an important consideration when studying tiny structures in which quantum effects play a crucial role. Researchers now show that quantum interference...
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Open AccessCoupling artificial molecular spin states by photon-assisted tunnelling
Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunnelling...