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Article
Modeling of Beta Conductivity in Tritiated Amorphous Silicon
The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed t...
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Article
Recombination in Tritiated Amorphous Silicon
Tritiated amorphous silicon was used for the intrinsic layer of a p-i-n hydrogenated amorphous silicon diode. Current versus voltage measurements were carried out on the diode over time under dark and illumina...
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Article
Density of States in Tritiated Amorphous Silicon Measured Using CPM
The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the con...
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Article
Open AccessPlasma potential probes for hot plasmas
Plasma probes are well established diagnostic tools. They are not complicated, relatively easy to construct and to handle. The easiest and fastest accessible parameter is their floating potential. However, th...
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Chapter and Conference Paper
Leveraging HPC Profiling and Tracing Tools to Understand the Performance of Particle-in-Cell Monte Carlo Simulations
Large-scale plasma simulations are critical for designing and develo** next-generation fusion energy devices and modeling industrial plasmas. BIT1 is a massively parallel Particle-in-Cell code designed for s...
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Chapter and Conference Paper
Optimizing BIT1, a Particle-in-Cell Monte Carlo Code, with OpenMP/OpenACC and GPU Acceleration
On the path toward develo** the first fusion energy devices, plasma simulations have become indispensable tools for supporting the design and development of fusion machines. Among these critical simulation t...