SpringerLink
Log in

Modeling of Beta Conductivity in Tritiated Amorphous Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium prod]ces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price includes VAT (Germany)

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. F. Gaspari, T. Kosteski, S. Zukotynski, N. P. Kherani, and W. Shmayda, Phil. Mag. B 80, 561 (2000).

    Article  CAS  Google Scholar 

  2. T. Kosteski, N.P. Kherani F. Gaspari, S. Zukotynski, and W.T. Shmayda, J. Vac. Sci. Technol. A 16, 893 (1998).

    Article  CAS  Google Scholar 

  3. E. Morgado, Phil. Mag. B 63, 529 (1991).

    Article  CAS  Google Scholar 

  4. H. Okamoto and Y. Hamakawa, Solid St. Commun. 24, 23 (1977).

    Article  CAS  Google Scholar 

  5. N.F. Mott and E.A. Davis in Electronic Processes in Non-crystalline Materials (Clarendon Press, 1979), p. 47.

    Google Scholar 

  6. R.S. Crandall, Phys. Rev. B., 43, 4057 (1991).

    Article  CAS  Google Scholar 

  7. J. A. Schmidt, R. D. Arce, R. R. Koropecki, R. H. Buitrago, Phys. Rev. B 59, 7 (1999)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada

    Stefan Costea, Franco Gaspari, Tome Kosteski & Stefan Zukotynski

  2. Ontario Power Technologies, Toronto, Ontario, M8Z 5S4, Canada

    Nazir P. Kherani & Walter T. Shmayda

Authors
  1. Stefan Costea
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Franco Gaspari
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Tome Kosteski
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Stefan Zukotynski
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Nazir P. Kherani
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Walter T. Shmayda
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Costea, S., Gaspari, F., Kosteski, T. et al. Modeling of Beta Conductivity in Tritiated Amorphous Silicon. MRS Online Proceedings Library 609, 274 (1999). https://doi.org/10.1557/PROC-609-A27.4

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-609-A27.4

Search

Navigation