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Density of States in Tritiated Amorphous Silicon Measured Using CPM

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Abstract

The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.

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Author notes

  1. Simone Pisana

    Present address: Department of Engineering, University of Cambridge, Trum**ton Street, Cambridge, CB2 1PZ, UK

Authors and Affiliations

  1. Department of Electrical & Computer Engineering, University of Toronto, Toronto, ON, M5S 3G4, Canada

    Simone Pisana, Stefan Costea, Tome Kosteski, Nazir P. Kherani, Stefan Zukotynski & Walter T. Shmayda

  2. Laboratory for Laser Energetics, University of Rochester, Rochester, NY, 14623-1299, USA

    Walter T. Shmayda

Authors
  1. Simone Pisana
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  2. Stefan Costea
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  3. Tome Kosteski
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  4. Nazir P. Kherani
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  5. Stefan Zukotynski
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  6. Walter T. Shmayda
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Pisana, S., Costea, S., Kosteski, T. et al. Density of States in Tritiated Amorphous Silicon Measured Using CPM. MRS Online Proceedings Library 836, L8.9 (2004). https://doi.org/10.1557/PROC-836-L8.9

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  • DOI: https://doi.org/10.1557/PROC-836-L8.9

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