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Article
Properties of Ultrathin Amorphous Silicon Nitride Films on III-V Semiconductors
Properties of ultrathin (~ 10nm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation ...
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Article
Surface charge spectroscopy—A novel surface science technique for measuring surface state distributions on semiconductors
A novel technique, surface charge spectroscopy (SCS), has been developed for measuring interface state density at a dielectric-semiconductor interface in conjunction with x-ray photoelectron spectroscopy (XPS)...
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Article
Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS
Ultrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surf...
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Article
Ion Beam Synthesis of SiC/Si Heterostructures by MEVVA Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were chara...
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Article
Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were charac...
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Article
Structure of ion-beam-deposited B--C--N--O films and the role of oxygen
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Article
Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon
Buried SiC layers were synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source under various implantation and annealing conditions. The infrared absorption spectra of these sam...
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Article
Crystallization of ion-beam-synthesized SiC layer by thermal annealing
at temperatures ranging from 600 to 1200 °C for 2 h. Rutherford backscattering spectrometry (RBS) analysis revealed carbon distribution and the formation of an SiC layer. Infrared spectroscopy (IR) exhibited ...
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Article
Growth of diamond and diamond-like films using a low energy ion beam
Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wa...
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Article
Mechanical, tribological, and stress analyses of ion-beam-deposited boron-rich boron nitride films with increasing N content
Boron (B) films and B-rich BNx films with different N contents (4.1–40.3 at.%.) were deposited by dual ion-beam deposition. The films consist of a B-rich phase constructed of icosahedral atomic clusters and a gra...
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Article
Short-range order, large-scale potential fluctuations, and photoluminescence in amorphous SiNx
The short-range order and electron structure of amorphous silicon nitride SiNx (x<4/3) have been studied by a combination of methods including high-resolution X-ray photoelectron spectroscopy. Neither random bond...
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Article
Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation
Planar SiC/Si heterostructures were formed by high dose carbon implantation using a metal vapor vacuum arc ion source. The variations of the field emission properties with the implant dose and annealing condit...