Abstract
Properties of ultrathin (~ 10nm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si(100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500°C also led to changes of the electrical properties in the films but not the substrate.
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Acknowledgments
The authors gratefully acknowledge financial support from the Natural Sciences and Engineering Research Council of Canada, Surface Science Western, the Ontario Center for Materials Research and from the Canadian Network of Centres of Excellence in Molecular and Interfacial Dynamics.
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Huang, L.J., Kwok, R.W.M., Lau, W.M. et al. Properties of Ultrathin Amorphous Silicon Nitride Films on III-V Semiconductors. MRS Online Proceedings Library 284, 595–600 (1992). https://doi.org/10.1557/PROC-284-595
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DOI: https://doi.org/10.1557/PROC-284-595