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Chapter
Silicon Nitride and Aluminum Oxide—Multifunctional Dielectric Layers Crucial for the Progress of Silicon Solar Cells
The achievement of high efficiencies for crystalline silicon solar cells is highly dependent on the reduction of carrier recombination at both cell surfaces. As a new era in PV, this loss of charges can be min...
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Chapter
Commercial High-Efficiency Silicon Solar Cells
The present rapidly expanding photovoltaic market is dominated by mono- and multicrystalline silicon solar cells based upon the standard, decades-old screen-printing approach [1, 2]. Despite significant progress ...
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Chapter
A Novel High-Efficiency Rear-Contact Solar Cell with Bifacial Sensitivity
At present, wafer-based silicon solar cells have a share of more than 90% of the photovoltaic market. Despite rapid growth in the manufacturing volume, accompanied by a significant drop in the module selling p...
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Chapter
Rapid Pulsed CO2 — Laser Annealing of Silicon-Nitride / Silicon Interface States
The thermally activated annealing of interface states and fixed positive charges of thin silicon-nitride layers on silicon deposited by plasma-enhanced chemical vapor deposition at 70 °C was investigated. Very...
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Chapter and Conference Paper
Effect of Temperature and Light Intensity on the Performance of MIS Inversion Layer Solar Cells
It is the purpose of this work to demonstrate how the performance of MIS (Metal-Insulator-Semiconductor) inversion layer solar cells is affected by changes in the cell temperature and the light intensity. It w...
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Chapter and Conference Paper
Recent Advances in Silicon Inversion Layer Solar Cells and Their Transfer to Industrial Pilot Production
The potential of 10 x 10cm2 MIS inversion layer solar cells for high efficiencies was demonstrated using simple, low-temperature and short-time processing in a industrially oriented laboratory line. Peak efficien...
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Chapter and Conference Paper
Low Temperature Back Surface Passivation of Solar Cells by Plasma Silicon Nitride
A novel low temperature technique for back surface passivation of solar cells is introduced, which is based upon a small-area ohmic contact grid in combination with plasma silicon nitride deposited on the sili...
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Chapter and Conference Paper
Influence of Plasma Si-Nttride Deposition on the Dark I-V Curves of MIS Contacts for Inversion Layer Solar Cells
The influence of the plasma Swiitride deposition process on electrical properties of Al/Si-oxide/p-Si MIS contacts was investigated. The Si-nitride was deposited onto the MIS diodes in a rf glow discharge by t...
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Chapter and Conference Paper
Application of Amorphous Silicon Nitride for MIS/Inversion Layer Solar Cells
It is demonstrated that CVD Si-nitride exhibits outstanding properties as transparent dielectric for MIS/inversion layer solar cells: very high interface charge densities QN/q up to 7×1012cm−2 with absolute stabi...
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Chapter and Conference Paper
Very High Charge Densities in Silicon Nitride Films on Silicon for Inversion Layer Solar Cells
Different ways of achieving high positive charge densities in Si nitride films on Si for the creation of low resistivity inversion layers for solar cells are demonstrated: (i) optimization of the deposition pa...
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Article
High temperature annealing of mnos devices and its effect on si-nitride stress, interface charge density and memory properties
The effects of high temperature annealing in N2 and H2 ambients upon the following properties of MNOS devices have been investigated: Si-nitride stress, etch rate, index of refraction, fixed interface charge and ...
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Article
Röntgenbeugungsuntersuchungen an schmelzflüssigen Aluminium-Zinn-Legierungen im Weitwinkelbereich unter besonderer Berücksichtigung von Clusterbildung
Seven Al-Sn-alloys (3 up to 30 a/o Sn) were investigated by means of X-ray wide angle scattering experiments. Furthermore, the intensity curves were measured at very small scattering angles using a special app...
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Article
Mikroentmischung in binären amorphen Festkörpern und Schmelzen nach Röntgenweitwinkelbeugungsexperimenten
Equations for calculating the areaF below the first maximum of electron distribution curves are deduced for three models of melts as well as of amorphous solids. These models are the statistical distribution of a...
