Summary
It is demonstrated that CVD Si-nitride exhibits outstanding properties as transparent dielectric for MIS/inversion layer solar cells: very high interface charge densities QN/q up to 7×1012cm−2 with absolute stability up to the nitride deposition temperature of 640°C, low NSS values of 4×1010 cm−2eV−1, QN/q values >1013cm−2 achievable by the Si-nitride charge storage effect, good AR coating and passivation properties as well as radiation resistance. Without optimizing the MIS contact and grid structure, MIS/IL solar cells with AM1 efficiencies of 15% (active area) and excellent UV sensitivity have been obtained.
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© 1981 ECSC, EEC, EAEC, Brussels and Luxembourg
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Hezel, R., Schörner, R., Meisel, T. (1981). Application of Amorphous Silicon Nitride for MIS/Inversion Layer Solar Cells. In: Palz, W. (eds) Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-8423-3_141
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DOI: https://doi.org/10.1007/978-94-009-8423-3_141
Publisher Name: Springer, Dordrecht
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