10 Result(s)
within
R. G. Mani
English
Science, Humanities and Social Sciences, multidisciplinary
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Article
Open AccessSize-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insi...
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Article
Open AccessMagneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking-property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic ele...
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Article
Open AccessTunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system
Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown ...
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Article
Open AccessMutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-cu...
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Article
Open AccessB-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system
We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid hel...
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Article
Open AccessCoherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs ...
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Article
Open AccessCyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetores...
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Article
Open AccessRadiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-i...
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Article
Open AccessStudy of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...
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Article
Open AccessMarginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
A metallic state with a vanishing activation gap, at a filling factor \(\nu = 8/5\) ν ...
