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    Article

    Electron Transport Properties of InN

    High-energy particle irradiation has been used to control the free electron concentration and electron mobility in InN by introducing native point defects that act as donors. A direct comparison between theore...

    R.E. Jones, H.C.M. van Genuchten, S.X. Li, L. Hsu in MRS Online Proceedings Library (2005)

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    Article

    Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

    We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and4He+ were used t...

    S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz in MRS Online Proceedings Library (2005)

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    Article

    Effect of superalloy substrate composition on the performance of a thermal barrier coating system

    An investigation was carried out to determine the performance of a thermal barrier coating system consisting of (ZrO2-8% Y2O3)/(Pt) on two single-crystal Ni-base superalloys. Coating/alloy behavior was studied wi...

    H. M. Tawancy, A. I. Mohamed, N. M. Abbas, R. E. Jones in Journal of Materials Science (2003)

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    Article

    Oxidation of Silicon Nanocrystals

    Silicon nanocrystals have made a recent appearance in the literature because of their potential importance in microelectronic[1] and optoelectronic [2] devices. For example, replacing the traditional Si floati...

    Kristen C. Scheer, Sucharita Madhukar in MRS Online Proceedings Library (2000)

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    Article

    Integration Aspects and Electrical Properties of SrBi2Ta2O9 for Non-Volatile Memory Applications

    Highlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the di...

    D. J. Taylor, R. E. Jones, Y. T. Lii, P. Zurcher in MRS Online Proceedings Library (1996)

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    Article

    Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics

    Integration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-o...

    P.D. Maniar, R. Moazzami, R. E. Jones, A. C. Campbell in MRS Online Proceedings Library (1993)

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    Article

    Fracture behaviour of model toughened composites under Mode I and Mode II delaminations

    The fracture behaviour of two toughened epoxy composite systems was investigated using various microscopy techniques. The Mode I delamination fracture toughness,G IC, Mode II delamination fracture toughness;G IIC

    H. -J. Sue, R. E. Jones, E. I. Garcia-Meitin in Journal of Materials Science (1993)

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    Article

    Analyses of Pt/Ti Electrodes for Plzt Capacitors

    A suitable choice of an electrode material is important for an acceptable electrical contact to a high-permittivity dielectric, such as PLZT. A material which does not form a low-permittivity oxide is necessar...

    J. O. Olowolafe, R. E. Jones, A. C. Campbell in MRS Online Proceedings Library (1991)