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    Article

    Fabrication of Silicon Nano-Crystal Dots on SiO2 by Ultrahigh-Vacuum Chemical Vapor Deposition

    We report a process for Silicon (Si) nano-crystal dots fabrication using a cold-wall Ultrahigh-Vacuum Chemical Vapor Deposition (UHV-CVD) system. Si2H6 gas was used as the pre-curser and irradiated upon SiO2 film...

    Masato Oishi, Takayuki Kawashima, Supika Mashiro in MRS Online Proceedings Library (2000)

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    Article

    Oxidation of Silicon Nanocrystals

    Silicon nanocrystals have made a recent appearance in the literature because of their potential importance in microelectronic[1] and optoelectronic [2] devices. For example, replacing the traditional Si floati...

    Kristen C. Scheer, Sucharita Madhukar in MRS Online Proceedings Library (2000)

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    Article

    CVD growth of Si nanocrystals on dielectric surfaces for nanocrystal floating gate memory application

    Initial stages of growth of silicon on dielectric surface proceeds through Volmer-Webber growth mode (through island formation) and coalescence of islands to form a continuous thin film layer. Growth of silico...

    Sucharita Madhukar, K. Smith, R. Muralidhar, D. O’Meara in MRS Online Proceedings Library (2000)

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    Article

    Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

    We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-abla...

    Sucharita Madhukar, S. Aggarwal, A. M. Dhote, R. Ramesh in Journal of Materials Research (1999)