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  1. No Access

    Article

    Integration Aspects and Electrical Properties of SrBi2Ta2O9 for Non-Volatile Memory Applications

    Highlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the di...

    D. J. Taylor, R. E. Jones, Y. T. Lii, P. Zurcher… in MRS Online Proceedings Library (1996)

  2. No Access

    Article

    Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications

    We report on the properties and characterization of SrBi2Ta2O9 (SBT, or Y − 1) thin film capacitors for ferroelectric random access memory (FERAM) applications. The films were prepared by spin-coating from carbox...

    Peir Y. Chu, Robert E. Jones Jr., Peter Zurcher… in Journal of Materials Research (1996)

  3. No Access

    Article

    Integration Of BPDA-PDA Polyimide With Two Levels Of Al(Cu) Interconnects

    As device geometries continue to scale down, a larger portion of the circuit delay is contributed by interconnects, and the majority of this delay is due to capacitive loading. The replacement of plasma-deposi...

    J. T. Wetzel, Y. T. Lii, S. M. Filipiak, B.-Y. Nguyen… in MRS Online Proceedings Library (1995)