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  1. Article

    Open Access

    Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

    Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O3) as oxidant precursor and post-deposition thermal annealing (TA) are investigat...

    Yung-Chen Cheng, Hsiang-Chen Wang, Shih-Wei Feng, Tsai-Pei Li in Nanoscale Research Letters (2020)

  2. Article

    Open Access

    Negative capacitance from the inductance of ferroelectric switching

    Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC and inductance induced ...

    Po-Hsien Cheng, Yu-Tung Yin, I-Na Tsai, Chen-Hsuan Lu in Communications Physics (2019)

  3. Article

    Open Access

    Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta do** and deposition

    Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below ...

    Po-Hsien Cheng, Chun-Yuan Wang, Teng-Jan Chang, Tsung-Han Shen in Scientific Reports (2017)

  4. Article

    Open Access

    Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature w...

    Huan-Yu Shih, Wei-Hao Lee, Wei-Chung Kao, Yung-Chuan Chuang in Scientific Reports (2017)

  5. Article

    Open Access

    Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication

    It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic and computing devices. Here we propose a completely original and nove...

    Po-Shuan Yang, Po-Hsien Cheng, C. Robert Kao, Miin-Jang Chen in Scientific Reports (2016)

  6. Article

    Open Access

    Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further impr...

    Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, Sheng-Fu Yu in Scientific Reports (2015)

  7. Article

    Open Access

    Probing Hydrophilic Interface of Solid/Liquid-Water by Nanoultrasonics

    Despite the numerous devoted studies, water at solid interfaces remains puzzling. An ongoing debate concerns the nature of interfacial water at a hydrophilic surface, whether it is more solid-like, ice-like, o...

    Pierre-Adrien Mante, Chien-Cheng Chen, Yu-Chieh Wen, Hui-Yuan Chen in Scientific Reports (2014)

  8. Article

    Open Access

    Improved characteristics of near-band-edge and deep-level emissions from ZnO nanorod arrays by atomic-layer-deposited Al2O3 and ZnO shell layers

    We report on the characteristics of near-band-edge (NBE) emission and deep-level band from ZnO/Al2O3 and ZnO/ZnO core-shell nanorod arrays (NRAs). Vertically aligned ZnO NRAs were synthesized by an aqueous chemic...

    Wen-Cheng Sun, Yu-Cheng Yeh, Chung-Ting Ko, Jr-Hau He in Nanoscale Research Letters (2011)