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Article
Open AccessReduction of charge offset drift using plasma oxidized aluminum in SETs
Aluminum oxide ( \({\text {AlO}}_x\) AlO x ...
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Article
Open AccessLong-term drift of Si-MOS quantum dots with intentional donor implants
Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionall...
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Article
Open AccessMachine learning techniques for state recognition and auto-tuning in quantum dots
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation has relied upon effective tools for achieving and maintaining good experimental parameters, i.e., tuning u...
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Article
Open AccessSpin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise
Rapid progress in semiconductor spin qubits has enabled experimental demonstrations of a two-qubit logic gate. Understanding spin decoherence in a two-qubit logic gate is necessary for optimal qubit operation....
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Article
Frequency Dependence of a Cryogenic Capacitor Measured Using Single Electron Tunneling Devices
A new type of capacitance standard based on counting electronshas been built. The operation of the standard has alreadygiven very promising results for the determination of thevalue of a cryogenic vacuum-gap c...
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Article
Sub-Micron Mesotaxial CoSi2 Wires
Transition metal suicides are receiving an increasing amount of attention as materials for VLSI interconnects because of their low resistivities and ease of integration with silicon. A recently invented techni...
