Abstract
Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbon rich SiGe layers is fabricated in this work to examine self-interstitial generation in a region that is isolated from self-interstitial formation at the surface or in the silicon bulk. Boron marker layers above, below and in between two SiGeC layers are used to monitor the self-interstitial concentration between the substitutional carbon. No evidence of self- interstitial depletion in the silicon spacer is observed, despite annealing in conditions believed sufficient to allow the self-interstitials to reach and react with surrounding substitutional carbon. Simulations of the self-interstitial and carbon indicate that the silicon self interstitial concentration in the spacer layer can be sustained in part due to a silicon self-interstitial recycling process through a reverse “kick-out” reaction.
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Acknowledgments
M. Carroll would like to thank H. Ruecker and C. S. Rafferty for helpful discussions regarding PROPHET and its use for carbon simulation. This work was supported by ARO and DARPA.
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Carroll, M.S., Sturm, J.C. Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers. MRS Online Proceedings Library 810, 148–153 (2003). https://doi.org/10.1557/PROC-810-C3.5
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DOI: https://doi.org/10.1557/PROC-810-C3.5